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Vishay SI4835DY-T1-E3 MOSFETs

Small Signal Field-Effect Transistor, 8A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8

1,100 ActiveVishaySO$0.23
SI4835DY-T1-E3 SO package illustration

Same model may have multiple batches, images only for reference.

SI4835DY-T1-E3
Manufacturer
Part Number (MPN)
SI4835DY-T1-E3
Detailed Description
Small Signal Field-Effect Transistor, 8A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
Package
SO
Lifecycle Status
Active
Datasheet
PDF SI4835DY-T1-E3 Datasheet
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Technical Specifications

Vishay SI4835DY-T1-E3 MOSFETs technical specifications.

General

Series
SI4
RoHS
Yes
Number of Channels
1
Package / Case
SO
Operating Temperature
-55 °C ~ 125 °C
Continuous Drain Current ID
8 A
Drain to Source Resistance
19mR
Drain to Source Voltage Vdss
-30 V
Fall Time
30 ns
Gate to Source Voltage Vgs
25 V

Alternate Parts Comparison (SI4835DY-T1-E3 vs SIP32461DB-T2-GE1 vs SIP32454DB-T2-GE1 vs SIP32401ADNP-T1GE4)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseSO4-UFBGA4-UFBGA4-UFDFN Exposed Pad
Operating Temperature-55 °C ~ 125 °C-40°C ~ 85°C (TA)-40°C ~ 125°C (TJ)-40°C ~ 125°C (TJ)
RoHSYesYesYesYes
SeriesSI4SIP324x1--SIP324x1
Mounting Type--Surface MountSurface MountSurface Mount
Supply Voltage--Not RequiredNot RequiredNot Required
Interface--On/OffOn/OffOn/Off
Lifecycle Status--ActiveActiveActive
Current Output Max--1.2A1.2A2.4A
Fault Protection--Reverse CurrentReverse CurrentReverse Current
Features--Slew Rate ControlledLoad Discharge, Slew Rate ControlledSlew Rate Controlled
Input Type--Non-InvertingNon-InvertingNon-Inverting
Action

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