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Vishay SI4825DY-T1-E3 MOSFETs

MOSFET P-CH 30V 8.1A 8SO

100Vishay8-SOIC (0.154", 3.90mm Width)$0.28
SI4825DY-T1-E3 - No Image Available

Same model may have multiple batches, images only for reference.

SI4825DY-T1-E3
Manufacturer
Part Number (MPN)
SI4825DY-T1-E3
Detailed Description
MOSFET P-CH 30V 8.1A 8SO
Package
8-SOIC (0.154", 3.90mm Width)
Lifecycle Status
Obsolete
Datasheet
PDF SI4825DY-T1-E3 Datasheet
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Technical Specifications

Vishay SI4825DY-T1-E3 MOSFETs technical specifications.

General

Series
TrenchFET®
RoHS
True
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Obsolete
Fet Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage Vdss
30 V
Current Continuous Drain ID 25 C
8.1A (Ta)
Drive Voltage Max Rds on Min Rds on
4.5V, 10V

Alternate Parts Comparison (SI4825DY-T1-E3 vs SIP32461DB-T2-GE1 vs SIP32454DB-T2-GE1 vs SIP32401ADNP-T1GE4)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / Case--4-UFBGA4-UFBGA4-UFDFN Exposed Pad
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)-40°C ~ 85°C (TA)-40°C ~ 125°C (TJ)-40°C ~ 125°C (TJ)
Supply Voltage--Not RequiredNot RequiredNot Required
Interface--On/OffOn/OffOn/Off
Current Output Max--1.2A1.2A2.4A
Fault Protection--Reverse CurrentReverse CurrentReverse Current
Features--Slew Rate ControlledLoad Discharge, Slew Rate ControlledSlew Rate Controlled
Input Type--Non-InvertingNon-InvertingNon-Inverting
Number of Outputs--111
Output Configuration--High SideHigh SideHigh Side
Output Type--P-ChannelN-ChannelN-Channel
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