Vishay SI4539DY-T1-E3 MOSFETs
MOSFET 30 Volt 5.9/4.9A 2W
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SI4539DY-T1-E3
Base Model
Detailed Description
MOSFET 30 Volt 5.9/4.9A 2W
Package
SO
Lifecycle Status
Active
Datasheet
SI4539DY-T1-E3 Datasheet
Quick Jump:
Technical Specifications
Vishay SI4539DY-T1-E3 MOSFETs technical specifications.
General
Series
SI4
RoHS
Yes
Number of Channels
2
Package / Case
SO
Operating Temperature
-55 °C ~ 150 °C
Continuous Drain Current ID
5.8 A
Drain to Source Resistance
53mR
Drain to Source Voltage Vdss
30 V
Fall Time
15 ns
Gate to Source Voltage Vgs
20 V
Alternate Parts Comparison (SI4539DY-T1-E3 vs SI4539DY-T1 vs SIP32461DB-T2-GE1 vs SIP32454DB-T2-GE1)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes |
| Package / Case | SO | -- | 4-UFBGA | 4-UFBGA |
| Operating Temperature | -55 °C ~ 150 °C | -- | -40°C ~ 85°C (TA) | -40°C ~ 125°C (TJ) |
| Series | SI4 | -- | SIP324x1 | -- |
| Number of Channels | 2 | -- | -- | -- |
| Continuous Drain Current ID | 5.8 A | -- | -- | -- |
| Drain to Source Resistance | 53mR | -- | -- | -- |
| Drain to Source Voltage Vdss | 30 V | -- | -- | -- |
| Fall Time | 15 ns | -- | -- | -- |
| Gate to Source Voltage Vgs | 20 V | -- | -- | -- |
| Max Power Dissipation | 2 W | -- | -- | -- |
| Package Quantity | 2500 | -- | -- | -- |
| Action |
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