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Vishay SI3900DV-T1-GE3 MOSFETs

Small Signal Field-Effect Transistor, 2A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, TSOP-6

1,000 ActiveVishaySI3900DV6-TSOP$0.14
SI3900DV-T1-GE3 6-TSOP package illustration

Same model may have multiple batches, images only for reference.

SI3900DV-T1-GE3
Manufacturer
Vishay
Part Number (MPN)
SI3900DV-T1-GE3
Category
Discrete SemiconductorsTransistorsMOSFETs
Base Model
SI3900DV
Detailed Description
Small Signal Field-Effect Transistor, 2A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, TSOP-6
Package
6-TSOP
Lifecycle Status
Active
Datasheet
PDF SI3900DV-T1-GE3 Datasheet
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Ordering Code Family

SI3900DV groups multiple orderable suffixes under one base device. Compare package, grade, and reel options on the base-number page before substituting within the family.

2 ordering variants listed on the family page.

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Technical Specifications

Vishay SI3900DV-T1-GE3 MOSFETs technical specifications.

General

Series
SI3
RoHS
Yes
Number of Channels
2 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
20 V
ID Continuous Drain Current
2.4 A
Rds on Drain Source Resistance
125 mOhms

Alternate Parts Comparison (SI3900DV-T1-GE3 vs SI3900DV-T1-E3 vs SIP32461DB-T2-GE1 vs SIP32454DB-T2-GE1)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
VishaySI3900DV-T1-GE3
VishaySI3900DV-T1-E3
VishaySIP32461DB-T2-GE1
VishaySIP32454DB-T2-GE1
Mounting TypeSMD/SMTSurface MountSurface MountSurface Mount
Operating Temperature- 55°C ~ + 150°C-55°C ~ 150°C (TJ)-40°C ~ 85°C (TA)-40°C ~ 125°C (TJ)
RoHSYesYesYesYes
SeriesSI3TrenchFET®SIP324x1--
Package6-TSOP--UFBGA-4UFBGA-4
Package / Case--TSOP4-UFBGA4-UFBGA
Lifecycle Status--ActiveActiveActive
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