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Vishay SI3900DV-T1-GE3 MOSFETs

Small Signal Field-Effect Transistor, 2A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, TSOP-6

1,000 ActiveVishaySI3900DV$0.14
SI3900DV-T1-GE3 - No Image Available

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SI3900DV-T1-GE3
Manufacturer
Part Number (MPN)
SI3900DV-T1-GE3
Base Model
Detailed Description
Small Signal Field-Effect Transistor, 2A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, TSOP-6
Lifecycle Status
Active
Datasheet
PDF SI3900DV-T1-GE3 Datasheet
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Ordering Code Family

SI3900DV groups multiple orderable suffixes under one base device. Compare package, grade, and reel options on the base-number page before substituting within the family.

2 ordering variants listed on the family page.

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Alternate Parts Comparison (SI3900DV-T1-GE3 vs SI3900DV-T1-E3 vs SIP32461DB-T2-GE1 vs SIP32454DB-T2-GE1)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / Case----4-UFBGA4-UFBGA
Mounting Type----Surface MountSurface Mount
Operating Temperature-----40°C ~ 85°C (TA)-40°C ~ 125°C (TJ)
Supply Voltage----Not RequiredNot Required
Interface----On/OffOn/Off
Current Output Max----1.2A1.2A
Fault Protection----Reverse CurrentReverse Current
Features----Slew Rate ControlledLoad Discharge, Slew Rate Controlled
Input Type----Non-InvertingNon-Inverting
Number of Outputs----11
Output Configuration----High SideHigh Side
Output Type----P-ChannelN-Channel
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