Vishay 4N35-X001 BJTs
Transistor Output Optocoupler, 1-Element, 5300V Isolation, ROHS COMPLIANT, PLASTIC, DIP-6
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
4N35-X001
Base Model
Detailed Description
Transistor Output Optocoupler, 1-Element, 5300V Isolation, ROHS COMPLIANT, PLASTIC, DIP-6
Package
DIP-6
Lifecycle Status
Active
Datasheet
4N35-X001 Datasheet
Quick Jump:
Technical Specifications
Vishay 4N35-X001 BJTs technical specifications.
General
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
Through Hole
Operating Temperature
- 55°C ~ + 100°C
Isolation Voltage
5000 Vrms
Output Type
NPN Phototransistor
Current Transfer Ratio Min
100 %
If Forward Current
60 mA
Vf Forward Voltage
1.5 V
Maximum Collector Emitter Voltage
30 V
Alternate Parts Comparison (4N35-X001 vs 4N35-X007T vs 4N35-X009T vs 4N25VM)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes |
| Package | DIP-6 | 6-SMD,GullWing | 6-SMD,GullWing | PDIP-6 |
| Mounting Type | Through Hole | SMD/SMT | SMD/SMT | -- |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel | -- |
| Configuration | 1 Channel | 1 Channel | 1 Channel | -- |
| Current Transfer Ratio | 100 % | 100 % | 100 % | -- |
| Current Transfer Ratio Min | 100 % | 100 % | 100 % | -- |
| Isolation Voltage | 5000 Vrms | 5000 Vrms | 5000 Vrms | -- |
| Maximum Collector Current | 50 mA | 50 mA | 50 mA | -- |
| Output Type | NPN Phototransistor | NPN Phototransistor | NPN Phototransistor | -- |
| Pd Power Dissipation | 150 mW | 150 mW | 150 mW | -- |
| Unit Weight | 0.014110 oz | 0.023877 oz | 0.023877 oz | -- |
| Action |
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