Toshiba TC58NVG2S0HTAI0B4H EEPROM
IC EEPROM 4GBIT 25NS 48TSOP
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
TC58NVG2S0HTAI0B4H
Detailed Description
IC EEPROM 4GBIT 25NS 48TSOP
Package
Tray
Lifecycle Status
Active
Datasheet
TC58NVG2S0HTAI0B4H Datasheet
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Technical Specifications
Toshiba TC58NVG2S0HTAI0B4H EEPROM technical specifications.
General
Memory Size
4Gb (512M x 8)
Packaging
Tray
Mounting Type
SMD (SMT)
Lifecycle Status
Active
Access Time
25ns
Technology
EEPROM - NAND
Supply Voltage Operating
2.7 V to 3.6 V
Memory Format
EEPROM
Temperature Range Operating
-40°C to 85°C (TA)
Related Parts Comparison (TC58NVG2S0HTAI0B4H vs TC7SH14FU,LJ(CT vs TC7SH04FU,LJ(CT vs TC7SH08FU,LJ(CT)
Side-by-side specifications of related catalog parts.
Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.
| This Part | Related Part | Related Part | Related Part | |
|---|---|---|---|---|
| Mounting Type | SMD (SMT) | Surface Mount | Surface Mount | Surface Mount |
| Lifecycle Status | Active | Active | Active | Active |
| Series | -- | TC7SH | TC7SH | TC7SH |
| Package / Case | -- | 5-TSSOP | 5-TSSOP | 5-TSSOP |
| Operating Temperature | -- | -40°C ~ 85°C | -40°C ~ 85°C | -40°C ~ 85°C |
| Supply Voltage | -- | 2V ~ 5.5V | 2V ~ 5.5V | 2V ~ 5.5V |
| Current Output High Low | -- | 8mA, 8mA | 8mA, 8mA | 8mA, 8mA |
| Current Quiescent Max | -- | 2 µA | 2 µA | 2 µA |
| Input Logic Level High | -- | 2.2V ~ 3.85V | 1.5V | 1.5V |
| Input Logic Level Low | -- | 0.9V ~ 1.65V | 0.5V | 0.5V |
| Logic Type | -- | Inverter | Inverter | AND Gate |
| Max Propagation Delay V Max Cl | -- | 10.6ns @ 5V, 50pF | 7.5ns @ 5V, 50pF | 7.9ns @ 5V, 50pF |
| Action |
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