Toshiba TC58BVG1S3HTA00B4H EEPROM
IC EEPROM 2GBIT 25NS 48TSOP
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
TC58BVG1S3HTA00B4H
Detailed Description
IC EEPROM 2GBIT 25NS 48TSOP
Package
Tray
Lifecycle Status
Active
Datasheet
TC58BVG1S3HTA00B4H Datasheet
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Technical Specifications
Toshiba TC58BVG1S3HTA00B4H EEPROM technical specifications.
General
Memory Size
2Gb (256M x 8)
Packaging
Tray
Mounting Type
SMD (SMT)
Lifecycle Status
Active
Access Time
25ns
Technology
EEPROM - NAND
Supply Voltage Operating
2.7 V to 3.6 V
Memory Format
EEPROM
Temperature Range Operating
0°C to 70°C (TA)
Alternate Parts Comparison (TC58BVG1S3HTA00B4H vs TC7SH14FU,LJ(CT vs TC7SH04FU,LJ(CT vs TC7SH08FU,LJ(CT)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | SMD (SMT) | Surface Mount | Surface Mount | Surface Mount |
| Lifecycle Status | Active | Active | Active | Active |
| Series | -- | TC7SH | TC7SH | TC7SH |
| Package / Case | -- | 5-TSSOP | 5-TSSOP | 5-TSSOP |
| Operating Temperature | -- | -40°C ~ 85°C | -40°C ~ 85°C | -40°C ~ 85°C |
| Supply Voltage | -- | 2V ~ 5.5V | 2V ~ 5.5V | 2V ~ 5.5V |
| Current Output High Low | -- | 8mA, 8mA | 8mA, 8mA | 8mA, 8mA |
| Current Quiescent Max | -- | 2 µA | 2 µA | 2 µA |
| Input Logic Level High | -- | 2.2V ~ 3.85V | 1.5V | 1.5V |
| Input Logic Level Low | -- | 0.9V ~ 1.65V | 0.5V | 0.5V |
| Logic Type | -- | Inverter | Inverter | AND Gate |
| Max Propagation Delay V Max Cl | -- | 10.6ns @ 5V, 50pF | 7.5ns @ 5V, 50pF | 7.9ns @ 5V, 50pF |
| Action |
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