Texas Instruments TPD4E001DPKR TVS Diodes
Low-capacitance 4-channel +/-15-k-V ESD protection array for high-speed data interfaces 6-USON -40 to 85
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
TPD4E001DPKR
Category
Base Model
Detailed Description
Low-capacitance 4-channel +/-15-k-V ESD protection array for high-speed data interfaces 6-USON -40 to 85
Lifecycle Status
Production
Datasheet
TPD4E001DPKR Datasheet
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Technical Specifications
Texas Instruments TPD4E001DPKR TVS Diodes technical specifications.
General
Interface
LVDS, USB, Ethernet
RoHS
Yes
Number of Channels
4
Operating Temperature
-40 °C ~ 85 °C
Lifecycle Status
Production
Capacitance
1.5 pF
Clamping Voltage
105.5 V
Depth
1.6 mm
Direction
Unidirectional
Leakage Current
1 nA
Alternate Parts Comparison (TPD4E001DPKR vs TPD4E001DRSR vs TPD4E001DRLRG4 vs TPD4E001DBVR)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Number of Channels | 4 | 4 | 4 | 4 |
| RoHS | Yes | Yes | Yes | Yes |
| Capacitance | 1.5 pF | 1.5pF | 1.5 pF | -- |
| Operating Temperature | -40 °C ~ 85 °C | -40°C ~ 85°C | -40 °C ~ 85 °C | -- |
| Interface | LVDS, USB, Ethernet | LVDS, USB, Ethernet | LVDS, USB, Ethernet | -- |
| Clamping Voltage | 105.5 V | 105.5V | 105.5 V | -- |
| Depth | 1.6 mm | 3mm | 1.2 mm | -- |
| Direction | Unidirectional | Unidirectional | Unidirectional | -- |
| Leakage Current | 1 nA | 1nA | 1 nA | -- |
| Min Breakdown Voltage | 11 V | 11V | 11 V | -- |
| Package Quantity | 1 | 1000 | 4000 | -- |
| Peak Pulse Power | 100 W | 100W | 100 W | -- |
| Action |
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