Texas Instruments CSD19538Q2T MOSFETs
100V, N ch NexFET MOSFET™, single SON2x2, 59mOhm 6-WSON -55 to 150
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
CSD19538Q2T
Base Model
Detailed Description
100V, N ch NexFET MOSFET™, single SON2x2, 59mOhm 6-WSON -55 to 150
Package
WSON-FET-6
Lifecycle Status
Active
Datasheet
CSD19538Q2T Datasheet
Quick Jump:
Technical Specifications
Texas Instruments CSD19538Q2T MOSFETs technical specifications.
General
Series
CSD19538Q2
RoHS
True
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
100 V
ID Continuous Drain Current
14.4 A
Rds on Drain Source Resistance
59 mOhms
Vgs Gate Source Voltage
- 20 V, + 20 V
Related Parts Comparison (CSD19538Q2T vs CSD19538Q3A vs CSD19538Q3AT vs CSD19538Q2)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | True | Yes | True | True |
| Configuration | Single | Single | Single | Single |
| Package | WSON-FET-6 | -- | VSONP-8 | WDFN-6 |
| Series | CSD19538Q2 | NexFET™ | -- | CSD19538Q2 |
| Mounting Type | SMD/SMT | Surface Mount | -- | SMD/SMT |
| Number of Channels | 1 Channel | -- | -- | 1 Channel |
| Channel Mode | Enhancement | -- | -- | Enhancement |
| Fall Time | 2 ns | -- | -- | 2 ns |
| ID Continuous Drain Current | 14.4 A | -- | -- | 14.4 A |
| Maximum Operating Temperature C | + 150 | -- | -- | + 150 |
| Minimum Operating Temperature C | - 55 | -- | -- | - 55 |
| Pd Power Dissipation | 2.5 W | -- | -- | 20.2 W |
| Action |
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