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Texas Instruments BQ4011YMA-70N Memory Integrated Circuit

IC NVSRAM 256KBIT PARALLEL 28DIP

1,197Texas Instruments28-DIP Module (0.61", 15.49mm)RoHS
BQ4011YMA-70N - No Image Available

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BQ4011YMA-70N
Manufacturer
Part Number (MPN)
BQ4011YMA-70N
Detailed Description
IC NVSRAM 256KBIT PARALLEL 28DIP
Package
28-DIP Module (0.61", 15.49mm)
Key Features
Package / Case: 28-DIP Module (0.61", 15.49mm); Mounting Type: Through Hole
Lifecycle Status
Obsolete
RoHS State
RoHS Compliant
Datasheet
PDF BQ4011YMA-70N Datasheet
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Technical Specifications

Texas Instruments BQ4011YMA-70N Memory Integrated Circuit technical specifications.

General

Interface
Parallel
Memory Size
256Kb (32K x 8)
RoHS
Compliant
Number of Pins
28
Package / Case
28-DIP Module
Mounting Type
Through Hole
Operating Temperature
-40°C ~ 85°C (TA)
Supply Voltage
4.5V ~ 5.5V
Lifecycle Status
Obsolete
Technology
NVSRAM (Non-Volatile SRAM)

Alternate Parts Comparison (BQ4011YMA-70N vs BQ4010YMA-85 vs BQ4010YMA-200 vs BQ4010MA-150)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / Case28-DIP Module28-DIP Module28-DIP Module28-DIP Module
Mounting TypeThrough HoleThrough HoleThrough HoleThrough Hole
Operating Temperature-40°C ~ 85°C (TA)0°C ~ 70°C (TA)0°C ~ 70°C (TA)0°C ~ 70°C (TA)
Supply Voltage4.5V ~ 5.5V4.5V ~ 5.5V4.5V ~ 5.5V4.75V ~ 5.5V
Memory Size256Kb (32K x 8)64Kbit64Kbit64Kbit
InterfaceParallelParallelParallelParallel
RoHSCompliantYesYesYes
Access Time70 ns85 ns200 ns150 ns
Memory FormatNVSRAMNVSRAMNVSRAMNVSRAM
Memory InterfaceParallelParallelParallelParallel
Memory TypeNon-VolatileNon-VolatileNon-VolatileNon-Volatile
Organization32Kx88KX88KX88KX8
Action

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