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Texas Instruments BQ4011LYMA-70N Memory Integrated Circuit

IC NVSRAM 256KBIT PARALLEL 28DIP

624Texas Instruments28-DIP Module (0.61", 15.49mm)RoHS
BQ4011LYMA-70N - No Image Available

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BQ4011LYMA-70N
Manufacturer
Part Number (MPN)
BQ4011LYMA-70N
Detailed Description
IC NVSRAM 256KBIT PARALLEL 28DIP
Package
28-DIP Module (0.61", 15.49mm)
Key Features
Package / Case: 28-DIP Module (0.61", 15.49mm); Mounting Type: Through Hole
Lifecycle Status
Obsolete
RoHS State
RoHS Compliant
Datasheet
PDF BQ4011LYMA-70N Datasheet
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Technical Specifications

Texas Instruments BQ4011LYMA-70N Memory Integrated Circuit technical specifications.

General

Interface
Parallel
Memory Size
256Kbit
Data Bus Width
8b
RoHS
Yes
Package / Case
28-DIP Module
Mounting Type
Through Hole
Operating Temperature
-40°C ~ 85°C (TA)
Supply Voltage
3V ~ 3.6V
Technology
NVSRAM (Non-Volatile SRAM)
Memory Type
Non-Volatile

Alternate Parts Comparison (BQ4011LYMA-70N vs BQ4011YMA-70N vs BQ4013YMA-70N vs BQ4016MC-70)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / Case28-DIP Module28-DIP Module32-DIP Module36-DIP Module
Mounting TypeThrough HoleThrough HoleThrough HoleThrough Hole
Operating Temperature-40°C ~ 85°C (TA)-40°C ~ 85°C (TA)-40°C ~ 85°C (TA)0°C ~ 70°C (TA)
Supply Voltage3V ~ 3.6V4.5V ~ 5.5V4.5V ~ 5.5V5
Memory Size256Kbit256Kb (32K x 8)1Mb (128K x 8)8M
InterfaceParallelParallelParallelParallel
RoHSYesCompliantCompliantCompliant
Access Time70 ns70 ns70 ns70 ns
Memory FormatNVSRAMNVSRAMNVSRAMNVSRAM
Memory InterfaceParallelParallelParallelParallel
Memory TypeNon-VolatileNon-VolatileNon-VolatileNon-Volatile
Organization32KX832Kx8128Kx81Mx8
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