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STMicroelectronics STWA57N65M5 MOSFETs

N-channel 650 V, 0.056 Ohm typ., 42 A MDmesh M5 Power MOSFET in TO-247 long leads package

108 ActiveSTMicroelectronicsTO-247$11.17
STWA57N65M5 TO-247 package illustration

Same model may have multiple batches, images only for reference.

STWA57N65M5
Manufacturer
Part Number (MPN)
STWA57N65M5
Detailed Description
N-channel 650 V, 0.056 Ohm typ., 42 A MDmesh M5 Power MOSFET in TO-247 long leads package
Package
TO-247
Lifecycle Status
Active
Datasheet
PDF STWA57N65M5 Datasheet
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Technical Specifications

STMicroelectronics STWA57N65M5 MOSFETs technical specifications.

General

Series
MDmesh™ V
Package / Case
TO-247-3
Mounting Type
Through Hole
Operating Temperature
150°C (TJ)
Lifecycle Status
Active
Vgs Th Max ID
5V @ 250µA
Gate Charge Qg Max Vgs
98 nC @ 10 V
Vgs Max
±25V
Input Capacitance Ciss Max Vds
4200 pF @ 100 V
Power Dissipation Max
250W (Tc)

Alternate Parts Comparison (STWA57N65M5 vs STWA72N60DM2AG vs STWA65N65DM2AG vs STWA45N65M5)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseTO-247-3TO-247-3TO-247-3TO-247-3
Mounting TypeThrough HoleThrough HoleThrough HoleThrough Hole
Operating Temperature150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)150°C (TJ)
Lifecycle StatusActiveActiveActiveObsolete
Current Continuous Drain ID 25 C42A (Tc)66A (Tc)60A (Tc)35A (Tc)
Drain to Source Voltage Vdss650 V600 V650 V650 V
Drive Voltage Max Rds on Min Rds on10V10V10V10V
Fet TypeN-ChannelN-ChannelN-ChannelN-Channel
Gate Charge Qg Max Vgs98 nC @ 10 V121 nC @ 10 V120 nC @ 10 V82 nC @ 10 V
Input Capacitance Ciss Max Vds4200 pF @ 100 V5508 pF @ 100 V5500 pF @ 100 V3470 pF @ 100 V
Power Dissipation Max250W (Tc)446W (Tc)446W (Tc)210W (Tc)
Rds on Max ID Vgs63mOhm @ 21A, 10V42mOhm @ 33A, 10V50mOhm @ 30A, 10V78mOhm @ 17.5A, 10V
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