STMicroelectronics STPSC8065D Rectifier Diodes
650 V power Schottky silicon carbide diode
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
STPSC8065D
Detailed Description
650 V power Schottky silicon carbide diode
Package
TO-220-2
Lifecycle Status
Obsolete
Datasheet
STPSC8065D Datasheet
Quick Jump:
Technical Specifications
STMicroelectronics STPSC8065D Rectifier Diodes technical specifications.
General
Series
ECOPACK®2
Package / Case
TO-220-2
Mounting Type
Through Hole
Lifecycle Status
Obsolete
Speed
Zero Recovery Time > 500mA (Io)
Reverse Recovery Time Trr
0 ns
Current Reverse Leakage Vr
105 µA @ 650 V
Capacitance Vr F
540pF @ 0V, 1MHz
Technology
SiC (Silicon Carbide) Schottky
Voltage Dc Reverse Vr Max
650 V
Alternate Parts Comparison (STPSC8065D vs STPSC10H12DY vs STPSC20065DY vs STPSC20065D)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Series | ECOPACK®2 | ECOPACK® | ECOPACK®2 | ECOPACK®2 |
| Package / Case | TO-220-2 | TO-220-2 | TO-220-2 | TO-220-2 |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Lifecycle Status | Obsolete | Obsolete | Active | Active |
| Capacitance Vr F | 540pF @ 0V, 1MHz | 725pF @ 0V, 1MHz | 1250pF @ 0V, 1MHz | 1250pF @ 0V, 1MHz |
| Current Average Rectified IO | 8A | 10A | 20A | 20A |
| Current Reverse Leakage Vr | 105 µA @ 650 V | 60 µA @ 1200 V | 150 µA @ 600 V | 300 µA @ 650 V |
| Description | -- | -- | -- | -- |
| Detailed Description | -- | -- | -- | -- |
| Operating Temperature Junction | -40°C ~ 175°C | -40°C ~ 175°C | -40°C ~ 175°C | -40°C ~ 175°C |
| Reverse Recovery Time Trr | 0 ns | 0 ns | 0 ns | 0 ns |
| Speed | Zero Recovery Time > 500mA (Io) | Zero Recovery Time > 500mA (Io) | Zero Recovery Time > 500mA (Io) | Zero Recovery Time > 500mA (Io) |
| Action |
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