STMicroelectronics STPSC20065D Rectifier Diodes
650 V power Schottky silicon carbide diode
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
STPSC20065D
Detailed Description
650 V power Schottky silicon carbide diode
Package
TO-220-2
Lifecycle Status
Active
Datasheet
STPSC20065D Datasheet
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Technical Specifications
STMicroelectronics STPSC20065D Rectifier Diodes technical specifications.
General
Series
ECOPACK®2
RoHS
Yes
Package / Case
TO-220-2
Mounting Type
Through Hole
Lifecycle Status
Active
Speed
Zero Recovery Time > 500mA (Io)
Reverse Recovery Time Trr
0 ns
Current Reverse Leakage Vr
300 µA @ 650 V
Capacitance Vr F
1250pF @ 0V, 1MHz
Technology
SiC (Silicon Carbide) Schottky
Related Parts Comparison (STPSC20065D vs STPSC6H065D vs STPSC10H12DY vs STPSC20065DY)
Side-by-side specifications of related catalog parts.
Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.
| This Part | Related Part | Related Part | Related Part | |
|---|---|---|---|---|
| Package / Case | TO-220-2 | TO-220-2 | TO-220-2 | TO-220-2 |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Lifecycle Status | Active | Active | Obsolete | Active |
| Capacitance Vr F | 1250pF @ 0V, 1MHz | 300pF @ 0V, 1MHz | 725pF @ 0V, 1MHz | 1250pF @ 0V, 1MHz |
| Current Average Rectified IO | 20A | 6A | 10A | 20A |
| Current Reverse Leakage Vr | 300 µA @ 650 V | 60 µA @ 650 V | 60 µA @ 1200 V | 150 µA @ 600 V |
| Grade | Industrial | Industrial | Automotive | Automotive |
| Operating Temperature Junction | -40°C ~ 175°C | -40°C ~ 175°C | -40°C ~ 175°C | -40°C ~ 175°C |
| Reverse Recovery Time Trr | 0 ns | 0 ns | 0 ns | 0 ns |
| Speed | Zero Recovery Time > 500mA (Io) | Zero Recovery Time > 500mA (Io) | Zero Recovery Time > 500mA (Io) | Zero Recovery Time > 500mA (Io) |
| Technology | SiC (Silicon Carbide) Schottky | SiC (Silicon Carbide) Schottky | SiC (Silicon Carbide) Schottky | SiC (Silicon Carbide) Schottky |
| Voltage Dc Reverse Vr Max | 650 V | 650 V | 1200 V | 650 V |
| Action |
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