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STMicroelectronics STPSC5H12D Rectifier Diodes

1200 V, 5 A High Surge Silicon Carbide Power Schottky Diode

27STMicroelectronicsTO-220-2$2.68
STPSC5H12D - No Image Available

Same model may have multiple batches, images only for reference.

STPSC5H12D
Manufacturer
Part Number (MPN)
STPSC5H12D
Detailed Description
1200 V, 5 A High Surge Silicon Carbide Power Schottky Diode
Package
TO-220-2
Lifecycle Status
Obsolete
Datasheet
PDF STPSC5H12D Datasheet
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Technical Specifications

STMicroelectronics STPSC5H12D Rectifier Diodes technical specifications.

General

Series
ECOPACK®2
Package / Case
TO-220-2
Mounting Type
Through Hole
Lifecycle Status
Obsolete
Speed
Zero Recovery Time > 500mA (Io)
Reverse Recovery Time Trr
0 ns
Current Reverse Leakage Vr
30 µA @ 1200 V
Capacitance Vr F
450pF @ 0V, 1MHz
Technology
SiC (Silicon Carbide) Schottky
Voltage Dc Reverse Vr Max
1200 V

Alternate Parts Comparison (STPSC5H12D vs STPSC10H12DY vs STPSC20065DY vs STPSC20065D)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
SeriesECOPACK®2ECOPACK®ECOPACK®2ECOPACK®2
Package / CaseTO-220-2TO-220-2TO-220-2TO-220-2
Mounting TypeThrough HoleThrough HoleThrough HoleThrough Hole
Lifecycle StatusObsoleteObsoleteActiveActive
Capacitance Vr F450pF @ 0V, 1MHz725pF @ 0V, 1MHz1250pF @ 0V, 1MHz1250pF @ 0V, 1MHz
Current Average Rectified IO5A10A20A20A
Current Reverse Leakage Vr30 µA @ 1200 V60 µA @ 1200 V150 µA @ 600 V300 µA @ 650 V
Operating Temperature Junction-40°C ~ 175°C-40°C ~ 175°C-40°C ~ 175°C-40°C ~ 175°C
Reverse Recovery Time Trr0 ns0 ns0 ns0 ns
SpeedZero Recovery Time > 500mA (Io)Zero Recovery Time > 500mA (Io)Zero Recovery Time > 500mA (Io)Zero Recovery Time > 500mA (Io)
TechnologySiC (Silicon Carbide) SchottkySiC (Silicon Carbide) SchottkySiC (Silicon Carbide) SchottkySiC (Silicon Carbide) Schottky
Voltage Dc Reverse Vr Max1200 V1200 V650 V650 V
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