STMicroelectronics STPSC4H065D Rectifier Diodes
650 V, 4 A High Surge Silicon Carbide Power Schottky Diode
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
STPSC4H065D
Base Model
Detailed Description
650 V, 4 A High Surge Silicon Carbide Power Schottky Diode
Package
TO-220-2
Lifecycle Status
Active
Datasheet
STPSC4H065D Datasheet
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Technical Specifications
STMicroelectronics STPSC4H065D Rectifier Diodes technical specifications.
General
Package / Case
TO-220-2
Mounting Type
Through Hole
Lifecycle Status
Active
Description
DIODE SIL CARB 650V 4A TO220AC
Detailed Description
Diode 650 V 4A Through Hole TO-220AC
Reverse Recovery Time Trr
0 ns
Current Reverse Leakage Vr
40 µA @ 650 V
Capacitance Vr F
200pF @ 0V, 1MHz
Technology
SiC (Silicon Carbide) Schottky
Voltage Dc Reverse Vr Max
650 V
Alternate Parts Comparison (STPSC4H065D vs STPSC4H065DI vs STPSC4H065B-TR vs STPSC10H12DY)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | TO-220-2 | TO-220-2 Insulated, TO-220AC | TO-252-3, DPAK | TO-220-2 |
| Mounting Type | Through Hole | Through Hole | Surface Mount | Through Hole |
| Lifecycle Status | Active | Active | Active | Obsolete |
| Current Average Rectified IO | 4A | 4A | 4A | 10A |
| Current Reverse Leakage Vr | 40 µA @ 650 V | 40 µA @ 650 V | 40 µA @ 650 V | 60 µA @ 1200 V |
| Description | DIODE SIL CARB 650V 4A TO220AC | DIODE SIC 650V 4A TO220AC INS | DIODE SIL CARBIDE 650V 4A DPAK | DIODE SIL CARB 1200V 10A TO220AC |
| Detailed Description | Diode 650 V 4A Through Hole TO-220AC | Diode 650 V 4A Through Hole TO-220AC ins | Diode 650 V 4A Surface Mount DPAK | Diode 1200 V 10A Through Hole TO-220AC |
| Operating Temperature Junction | -40°C ~ 175°C | -40°C ~ 175°C | -40°C ~ 175°C | -40°C ~ 175°C |
| Speed | Zero Recovery Time > 500mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Zero Recovery Time > 500mA (Io) | Zero Recovery Time > 500mA (Io) |
| Technology | SiC (Silicon Carbide) Schottky | SiC (Silicon Carbide) Schottky | SiC (Silicon Carbide) Schottky | SiC (Silicon Carbide) Schottky |
| Voltage Dc Reverse Vr Max | 650 V | 650 V | 650 V | 1200 V |
| Voltage Forward Vf Max If | 1.75 V @ 4 A | 1.75 V @ 4 A | 1.75 V @ 4 A | 1.5 V @ 10 A |
| Action |
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