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STMicroelectronics STPSC40H12CWL Rectifier Diodes

1200 V, 40 A High Surge Silicon Carbide Power Schottky Diode

31STMicroelectronicsTO-247-3$40.68
STPSC40H12CWL - No Image Available

Same model may have multiple batches, images only for reference.

STPSC40H12CWL
Manufacturer
Part Number (MPN)
STPSC40H12CWL
Detailed Description
1200 V, 40 A High Surge Silicon Carbide Power Schottky Diode
Package
TO-247-3
Lifecycle Status
Obsolete
Datasheet
PDF STPSC40H12CWL Datasheet
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Technical Specifications

STMicroelectronics STPSC40H12CWL Rectifier Diodes technical specifications.

General

Series
ECOPACK®
Package / Case
TO-247-3
Mounting Type
Through Hole
Lifecycle Status
Obsolete
Voltage Forward Vf Max If
1.5 V @ 20 A
Speed
No Recovery Time > 500mA (Io)
Reverse Recovery Time Trr
0 ns
Current Reverse Leakage Vr
120 µA @ 1200 V
Operating Temperature Junction
-40°C ~ 175°C
Diode Configuration
1 Pair Common Cathode

Alternate Parts Comparison (STPSC40H12CWL vs STPSC40065CW vs STPSC20H065CW vs STPS40L15CW)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseTO-247-3TO-247-3TO-247-3TO-247-3
Mounting TypeThrough HoleThrough HoleThrough HoleThrough Hole
Lifecycle StatusObsoleteActiveActiveActive
Current Average Rectified IO Per Diode38A20A10A20A
Current Reverse Leakage Vr120 µA @ 1200 V300 µA @ 600 V100 µA @ 650 V6 mA @ 15 V
Diode Configuration1 Pair Common Cathode1 Pair Common Cathode1 Pair Common Cathode1 Pair Common Cathode
Operating Temperature Junction-40°C ~ 175°C-40°C ~ 175°C-40°C ~ 175°C125°C (Max)
SpeedNo Recovery Time > 500mA (Io)Fast Recovery =< 500ns, > 200mA (Io)No Recovery Time > 500mA (Io)Fast Recovery =< 500ns, > 200mA (Io)
TechnologySiC (Silicon Carbide) SchottkySiC (Silicon Carbide) SchottkySiC (Silicon Carbide) SchottkySchottky
Voltage Dc Reverse Vr Max1200 V650 V650 V15 V
Voltage Forward Vf Max If1.5 V @ 20 A1.7 V @ 20 A1.75 V @ 10 A410 mV @ 19 A
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