STMicroelectronics STPSC20H065CW Rectifier Diodes
650 V, 20 A dual High Surge Silicon Carbide Power Schottky Diode

Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
STPSC20H065CW
Base Model
Detailed Description
650 V, 20 A dual High Surge Silicon Carbide Power Schottky Diode
Package
TO-247-3
Lifecycle Status
Active
Datasheet
STPSC20H065CW Datasheet
Quick Jump:
Technical Specifications
STMicroelectronics STPSC20H065CW Rectifier Diodes technical specifications.
General
Package / Case
TO-247-3
Mounting Type
Through Hole
Lifecycle Status
Active
Description
DIODE ARRAY SIC 650V 10A TO-247
Detailed Description
Diode Array 1 Pair Common Cathode 650 V 10A Through Hole TO-247-3
Speed
No Recovery Time > 500mA (Io)
Reverse Recovery Time Trr
0 ns
Current Reverse Leakage Vr
100 µA @ 650 V
Operating Temperature Junction
-40°C ~ 175°C
Diode Configuration
1 Pair Common Cathode
Alternate Parts Comparison (STPSC20H065CW vs STPSC20H12GY-TR vs STPSC20H12DY vs STPSC20H065CWY)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | TO-247-3 | TO-263-3, D2PAK | TO-220-2 | TO-247-3 |
| Mounting Type | Through Hole | Surface Mount | Through Hole | Through Hole |
| Lifecycle Status | Active | Obsolete | Obsolete | Active |
| Current Reverse Leakage Vr | 100 µA @ 650 V | 120 µA @ 1200 V | 120 µA @ 1200 V | 100 µA @ 650 V |
| Description | DIODE ARRAY SIC 650V 10A TO-247 | DIODE SIL CARB 1200V 20A D2PAK | DIODE SIL CARB 1200V 20A TO220AC | DIODE ARRAY SIC 650V 10A TO247-3 |
| Detailed Description | Diode Array 1 Pair Common Cathode 650 V 10A Through Hole TO-247-3 | Diode 1200 V 20A Surface Mount D2PAK | Diode 1200 V 20A Through Hole TO-220AC | Diode Array 1 Pair Common Cathode 650 V 10A Through Hole TO-247-3 |
| Operating Temperature Junction | -40°C ~ 175°C | -40°C ~ 175°C | -40°C ~ 175°C | -40°C ~ 175°C |
| Speed | No Recovery Time > 500mA (Io) | Zero Recovery Time > 500mA (Io) | Zero Recovery Time > 500mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) |
| Technology | SiC (Silicon Carbide) Schottky | SiC (Silicon Carbide) Schottky | SiC (Silicon Carbide) Schottky | SiC (Silicon Carbide) Schottky |
| Voltage Dc Reverse Vr Max | 650 V | 1200 V | 1200 V | 650 V |
| Voltage Forward Vf Max If | 1.75 V @ 10 A | 1.5 V @ 20 A | 1.5 V @ 20 A | 1.75 V @ 10 A |
| Reverse Recovery Time Trr | 0 ns | 0 ns | 0 ns | -- |
| Action |
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