STMicroelectronics STPSC30H12CWL Rectifier Diodes
1200 V power Schottky silicon carbide diode

Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
STPSC30H12CWL
Detailed Description
1200 V power Schottky silicon carbide diode
Package
TO-247-3
Lifecycle Status
Obsolete
Datasheet
STPSC30H12CWL Datasheet
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Technical Specifications
STMicroelectronics STPSC30H12CWL Rectifier Diodes technical specifications.
General
Series
ECOPACK®
Package / Case
TO-247-3
Mounting Type
Through Hole
Lifecycle Status
Obsolete
Description
DIODE ARR SIC 1200V 38A TO247-3
Detailed Description
Diode Array 1 Pair Common Cathode 1200 V 38A Through Hole TO-247-3
Voltage Forward Vf Max If
1.5 V @ 15 A
Speed
No Recovery Time > 500mA (Io)
Reverse Recovery Time Trr
0 ns
Current Reverse Leakage Vr
90 µA @ 1200 V
Alternate Parts Comparison (STPSC30H12CWL vs STPSC40065CW vs STPSC20H065CW vs STPS40L15CW)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | TO-247-3 | TO-247-3 | TO-247-3 | TO-247-3 |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Lifecycle Status | Obsolete | Active | Active | Active |
| Current Average Rectified IO Per Diode | 38A | 20A | 10A | 20A |
| Current Reverse Leakage Vr | 90 µA @ 1200 V | 300 µA @ 600 V | 100 µA @ 650 V | 6 mA @ 15 V |
| Description | DIODE ARR SIC 1200V 38A TO247-3 | DIODE ARRAY SIC 650V 20A TO247-3 | DIODE ARRAY SIC 650V 10A TO-247 | DIODE ARR SCHOTT 15V 20A TO247-3 |
| Detailed Description | Diode Array 1 Pair Common Cathode 1200 V 38A Through Hole TO-247-3 | Diode Array 1 Pair Common Cathode 650 V 20A Through Hole TO-247-3 | Diode Array 1 Pair Common Cathode 650 V 10A Through Hole TO-247-3 | Diode Array 1 Pair Common Cathode 15 V 20A Through Hole TO-247-3 |
| Diode Configuration | 1 Pair Common Cathode | 1 Pair Common Cathode | 1 Pair Common Cathode | 1 Pair Common Cathode |
| Operating Temperature Junction | -40°C ~ 175°C | -40°C ~ 175°C | -40°C ~ 175°C | 125°C (Max) |
| Speed | No Recovery Time > 500mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | No Recovery Time > 500mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) |
| Technology | SiC (Silicon Carbide) Schottky | SiC (Silicon Carbide) Schottky | SiC (Silicon Carbide) Schottky | Schottky |
| Voltage Dc Reverse Vr Max | 1200 V | 650 V | 650 V | 15 V |
| Action |
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