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STMicroelectronics STP33N60DM2 MOSFETs

N-channel 600 V, 0.110 Ohm typ., 24 A MDmesh DM2 Power MOSFET in TO-220 package

4,000 ActiveSTMicroelectronicsSTP33NTO-220$4.83
STP33N60DM2 - No Image Available

Same model may have multiple batches, images only for reference.

STP33N60DM2
Manufacturer
Part Number (MPN)
STP33N60DM2
Base Model
Detailed Description
N-channel 600 V, 0.110 Ohm typ., 24 A MDmesh DM2 Power MOSFET in TO-220 package
Package
TO-220
Lifecycle Status
Active
Datasheet
PDF STP33N60DM2 Datasheet
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Ordering Code Family

STP33N groups multiple orderable suffixes under one base device. Compare package, grade, and reel options on the base-number page before substituting within the family.

5 ordering variants listed on the family page.

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Technical Specifications

STMicroelectronics STP33N60DM2 MOSFETs technical specifications.

General

Series
MDmesh™ DM2
Package / Case
TO-220-3
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Vgs Th Max ID
5V @ 250µA
Gate Charge Qg Max Vgs
43 nC @ 10 V
Vgs Max
±25V
Input Capacitance Ciss Max Vds
1870 pF @ 100 V
Power Dissipation Max
190W (Tc)

Alternate Parts Comparison (STP33N60DM2 vs STP33N60M2 vs STP33N65M2 vs STP33N60M6)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
SeriesMDmesh™ DM2MDmesh™ II PlusMDmesh™ M2MDmesh™ M6
Package / CaseTO-220-3TO-220-3TO-220-3TO-220-3
Mounting TypeThrough HoleThrough HoleThrough HoleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)150°C (TJ)-55°C ~ 150°C (TJ)
Lifecycle StatusActiveActiveActiveActive
Current Continuous Drain ID 25 C24A (Tc)26A (Tc)24A (Tc)25A (Tc)
Description--------
Detailed Description--------
Drain to Source Voltage Vdss600 V600 V650 V600 V
Drive Voltage Max Rds on Min Rds on10V10V10V10V
Fet TypeN-ChannelN-ChannelN-ChannelN-Channel
Gate Charge Qg Max Vgs43 nC @ 10 V45.5 nC @ 10 V41.5 nC @ 10 V33.4 nC @ 10 V
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