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STMicroelectronics STP26N60M2 MOSFETs

N-channel 600 V, 0.14 Ohm typ., 20 A MDmesh M2 Power MOSFET in a TO-220 package

19 ActiveSTMicroelectronicsSTP26NTO-220$2.02
STP26N60M2 TO-220 package illustration

Same model may have multiple batches, images only for reference.

STP26N60M2
Manufacturer
Part Number (MPN)
STP26N60M2
Base Model
Detailed Description
N-channel 600 V, 0.14 Ohm typ., 20 A MDmesh M2 Power MOSFET in a TO-220 package
Package
TO-220
Lifecycle Status
Active
Datasheet
PDF STP26N60M2 Datasheet
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Ordering Code Family

STP26N groups multiple orderable suffixes under one base device. Compare package, grade, and reel options on the base-number page before substituting within the family.

2 ordering variants listed on the family page.

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Technical Specifications

STMicroelectronics STP26N60M2 MOSFETs technical specifications.

General

Series
MDmesh™ M2
Package / Case
TO-220-3
Mounting Type
Through Hole
Lifecycle Status
Active
Current Continuous Drain ID 25 C
20A (Tc)
Drive Voltage Max Rds on Min Rds on
10V
Vgs Max
±25V
Power Dissipation Max
169W (Tc)
Fet Type
N-Channel
Technology
MOSFET (Metal Oxide)

Alternate Parts Comparison (STP26N60M2 vs STP26NM60N vs STP26N60DM6 vs STP16CPC26MTR)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseTO-220-3TO-220-3TO-220-324-SOIC
Mounting TypeThrough HoleThrough HoleThrough HoleSurface Mount
Lifecycle StatusActiveActiveActiveActive
SeriesMDmesh™ M2MDmesh™ IIMDmesh™ DM6--
Current Continuous Drain ID 25 C20A (Tc)20A (Tc)18A (Tc)--
Drain to Source Voltage Vdss600 V600 V600 V--
Drive Voltage Max Rds on Min Rds on10V10V10V--
Fet TypeN-ChannelN-ChannelN-Channel--
Power Dissipation Max169W (Tc)140W (Tc)130W (Tc)--
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)--
Vgs Max±25V±30V±25V--
Operating Temperature--150°C (TJ)-55°C ~ 150°C (TJ)-40°C ~ 125°C (TA)
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