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STMicroelectronics STL100N8F7 MOSFETs

N-channel 80 V, 5.2 mOhm typ., 100 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package

3,000 ActiveSTMicroelectronicsSTL100NPowerFlat™ (5x6)$1.95
STL100N8F7 PowerFlat™ (5x6) package illustration

Same model may have multiple batches, images only for reference.

STL100N8F7
Manufacturer
Part Number (MPN)
STL100N8F7
Base Model
Detailed Description
N-channel 80 V, 5.2 mOhm typ., 100 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package
Package
PowerFlat™ (5x6)
Lifecycle Status
Active
Datasheet
PDF STL100N8F7 Datasheet
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Ordering Code Family

STL100N groups multiple orderable suffixes under one base device. Compare package, grade, and reel options on the base-number page before substituting within the family.

3 ordering variants listed on the family page.

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Technical Specifications

STMicroelectronics STL100N8F7 MOSFETs technical specifications.

General

Series
STripFET™
Package / Case
8-PowerVDFN
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 175°C (TJ)
Lifecycle Status
Active
Vgs Th Max ID
4.5V @ 250µA
Gate Charge Qg Max Vgs
46.8 nC @ 10 V
Vgs Max
±20V
Input Capacitance Ciss Max Vds
3435 pF @ 40 V
Power Dissipation Max
4.8W (Ta), 120W (Tc)

Related Parts Comparison (STL100N8F7 vs STL100N6LF6 vs STL100N10F7 vs STLQ020PUR)

Side-by-side specifications of related catalog parts.

Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.

This PartRelated PartRelated PartRelated Part
Package / Case8-PowerVDFN8-PowerVDFN8-PowerVDFN6-VFDFN Exposed Pad
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-40°C ~ 125°C (TJ)
Lifecycle StatusActiveObsoleteActiveActive
SeriesSTripFET™DeepGATE™, STripFET™ VIDeepGATE™, STripFET™ VII--
Current Continuous Drain ID 25 C100A (Tc)100A (Tc)80A (Tc)--
Drain to Source Voltage Vdss80 V60 V100 V--
Drive Voltage Max Rds on Min Rds on10V4.5V, 10V10V--
Fet TypeN-ChannelN-ChannelN-Channel--
Gate Charge Qg Max Vgs46.8 nC @ 10 V130 nC @ 10 V80 nC @ 10 V--
Input Capacitance Ciss Max Vds3435 pF @ 40 V8900 pF @ 25 V5680 pF @ 50 V--
Power Dissipation Max4.8W (Ta), 120W (Tc)4.8W (Tc)5W (Ta), 100W (Tc)--
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