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STMicroelectronics STI18N65M2 MOSFETs

N-channel 650 V, 0.275 Ohm typ., 12 A MDmesh M2 Power MOSFET in TO-220 package

1,000 ActiveSTMicroelectronicsI2PAK$6.55
STI18N65M2 - No Image Available

Same model may have multiple batches, images only for reference.

STI18N65M2
Manufacturer
Part Number (MPN)
STI18N65M2
Detailed Description
N-channel 650 V, 0.275 Ohm typ., 12 A MDmesh M2 Power MOSFET in TO-220 package
Package
I2PAK
Lifecycle Status
Active
Datasheet
PDF STI18N65M2 Datasheet
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Technical Specifications

STMicroelectronics STI18N65M2 MOSFETs technical specifications.

General

Series
MDmesh™ M2
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type
Through Hole
Operating Temperature
150°C (TJ)
Lifecycle Status
Active
Vgs Th Max ID
4V @ 250µA
Gate Charge Qg Max Vgs
20 nC @ 10 V
Vgs Max
±25V
Input Capacitance Ciss Max Vds
770 pF @ 100 V
Power Dissipation Max
110W (Tc)

Alternate Parts Comparison (STI18N65M2 vs STI24NM60N vs STI47N60DM6AG vs STI33N65M2)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
SeriesMDmesh™ M2--MDmesh™ DM6MDmesh™ M2
Package / CaseTO-262-3 Long Leads, I2PAK, TO-262AA--TO-262-3 Long Leads, I2PAK, TO-262AATO-262-3 Long Leads, I2PAK, TO-262AA
Mounting TypeThrough Hole--Through HoleThrough Hole
Operating Temperature150°C (TJ)---55°C ~ 150°C (TJ)150°C (TJ)
Lifecycle StatusActive--ActiveActive
Current Continuous Drain ID 25 C12A (Tc)--36A (Tc)24A (Tc)
Description--------
Detailed Description--------
Drain to Source Voltage Vdss650 V--600 V650 V
Drive Voltage Max Rds on Min Rds on10V--10V10V
Fet TypeN-Channel--N-ChannelN-Channel
Gate Charge Qg Max Vgs20 nC @ 10 V--55 nC @ 10 V41.5 nC @ 10 V
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