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STMicroelectronics STH315N10F7-6 MOSFETs

N-Ch MOSFET 100V 180A 2.3mR H2PAK-6 SMT

5,000 ActiveSTMicroelectronicsSTH315NH2PAK-6$3.24
STH315N10F7-6 H2PAK-6 package illustration

Same model may have multiple batches, images only for reference.

STH315N10F7-6
Manufacturer
Part Number (MPN)
STH315N10F7-6
Base Model
Detailed Description
N-Ch MOSFET 100V 180A 2.3mR H2PAK-6 SMT
Package
H2PAK-6
Lifecycle Status
Active
Datasheet
PDF STH315N10F7-6 Datasheet
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Ordering Code Family

STH315N groups multiple orderable suffixes under one base device. Compare package, grade, and reel options on the base-number page before substituting within the family.

2 ordering variants listed on the family page.

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Technical Specifications

STMicroelectronics STH315N10F7-6 MOSFETs technical specifications.

General

Series
DeepGATE™, STripFET™ VII
RoHS
Yes
Package / Case
TO-263-7, D2PAK
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 175°C (TJ)
Lifecycle Status
Active
Gate Charge Qg Max Vgs
180 nC @ 10 V
Vgs Max
±20V
Input Capacitance Ciss Max Vds
12800 pF @ 25 V
Power Dissipation Max
315W (Tc)

Alternate Parts Comparison (STH315N10F7-6 vs STH315N10F7-2 vs STHS2375AM6F vs STHS4257A1M6F)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseTO-263-7, D2PAKTO-263-3, D2PAK8-SOIC8-SOIC
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-40°C ~ 85°C-40°C ~ 85°C
Lifecycle StatusActiveActiveObsoleteObsolete
SeriesDeepGATE™, STripFET™ VIIDeepGATE™, STripFET™ VII----
Current Continuous Drain ID 25 C180A (Tc)180A (Tc)----
Drain to Source Voltage Vdss100 V100 V----
Drive Voltage Max Rds on Min Rds on10V10V----
Fet TypeN-ChannelN-Channel----
Gate Charge Qg Max Vgs180 nC @ 10 V180 nC @ 10 V----
GradeAutomotiveAutomotive----
Input Capacitance Ciss Max Vds12800 pF @ 25 V12800 pF @ 25 V----
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