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STMicroelectronics STFI6N65K3 MOSFETs

N-channel 650 V, 1.1 Ohm typ., 5.4 A SuperMESH3(TM) Power MOSFET in I2PAKFP package

12,000STMicroelectronicsTO-281 (I2PAKFP)$2.63
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STFI6N65K3
Manufacturer
Part Number (MPN)
STFI6N65K3
Detailed Description
N-channel 650 V, 1.1 Ohm typ., 5.4 A SuperMESH3(TM) Power MOSFET in I2PAKFP package
Package
TO-281 (I2PAKFP)
Lifecycle Status
Obsolete
Datasheet
PDF STFI6N65K3 Datasheet
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Technical Specifications

STMicroelectronics STFI6N65K3 MOSFETs technical specifications.

General

Series
SuperMESH3™
Package / Case
TO-262-3 Full Pack, I2PAK
Mounting Type
Through Hole
Operating Temperature
150°C (TJ)
Lifecycle Status
Obsolete
Vgs Th Max ID
4.5V @ 50µA
Gate Charge Qg Max Vgs
33 nC @ 10 V
Vgs Max
±30V
Input Capacitance Ciss Max Vds
880 pF @ 50 V
Power Dissipation Max
30W (Tc)

Alternate Parts Comparison (STFI6N65K3 vs STFI4N62K3 vs STH13N120K5-2AG vs STW62N65M5)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseTO-262-3 Full Pack, I2PAKTO-262-3 Full Pack, I2PAKTO-263-3, D2PAKTO-247-3
Mounting TypeThrough HoleThrough HoleSurface MountThrough Hole
Operating Temperature150°C (TJ)150°C (TJ)-55°C ~ 150°C (TJ)150°C (TJ)
Lifecycle StatusObsoleteObsoleteActiveActive
Current Continuous Drain ID 25 C5.4A (Tc)3.8A (Tc)12A (Tc)46A (Tc)
Description--------
Detailed Description--------
Drain to Source Voltage Vdss650 V620 V1200 V650 V
Drive Voltage Max Rds on Min Rds on10V10V10V10V
Fet TypeN-ChannelN-ChannelN-ChannelN-Channel
Gate Charge Qg Max Vgs33 nC @ 10 V22 nC @ 10 V44.2 nC @ 10 V142 nC @ 10 V
Input Capacitance Ciss Max Vds880 pF @ 50 V550 pF @ 50 V1370 pF @ 100 V6420 pF @ 100 V
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