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STMicroelectronics STFH10N60M2 MOSFETs

N-channel 600 V, 0.55 Ohm typ., 7.5 A MDmesh M2 Power MOSFET in TO-220FP wide creepage package

23STMicroelectronicsTO-220FPAB$5.30
STFH10N60M2 - No Image Available

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STFH10N60M2
Manufacturer
Part Number (MPN)
STFH10N60M2
Detailed Description
N-channel 600 V, 0.55 Ohm typ., 7.5 A MDmesh M2 Power MOSFET in TO-220FP wide creepage package
Package
TO-220FPAB
Lifecycle Status
Obsolete
Datasheet
PDF STFH10N60M2 Datasheet
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Technical Specifications

STMicroelectronics STFH10N60M2 MOSFETs technical specifications.

General

Series
MDmesh™
Package / Case
TO-220-3 Full Pack
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Obsolete
Vgs Th Max ID
4V @ 250µA
Gate Charge Qg Max Vgs
13.5 nC @ 10 V
Vgs Max
±25V
Input Capacitance Ciss Max Vds
400 pF @ 100 V
Power Dissipation Max
25W (Tc)

Alternate Parts Comparison (STFH10N60M2 vs STFH24N60M2 vs STFH13N60M2 vs STFH18N60M2)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
SeriesMDmesh™MDmesh™MDmesh™MDmesh™
Package / CaseTO-220-3 Full PackTO-220-3 Full PackTO-220-3 Full PackTO-220-3 Full Pack
Mounting TypeThrough HoleThrough HoleThrough HoleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Lifecycle StatusObsoleteActiveObsoleteActive
Current Continuous Drain ID 25 C7.5A (Tc)18A (Tc)11A (Tc)13A (Tc)
Description--------
Detailed Description--------
Drain to Source Voltage Vdss600 V600 V600 V600 V
Drive Voltage Max Rds on Min Rds on10V10V10V10V
Fet TypeN-ChannelN-ChannelN-ChannelN-Channel
Gate Charge Qg Max Vgs13.5 nC @ 10 V29 nC @ 10 V17 nC @ 10 V21.5 nC @ 10 V
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