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STMicroelectronics STF6N65M2 MOSFETs

N-channel 650 V, 1.2 Ohm typ., 4 A MDmesh M2 Power MOSFET in TO-220FP package

12,810STMicroelectronicsTO-220FP$0.81
STF6N65M2 - No Image Available

Same model may have multiple batches, images only for reference.

STF6N65M2
Manufacturer
Part Number (MPN)
STF6N65M2
Detailed Description
N-channel 650 V, 1.2 Ohm typ., 4 A MDmesh M2 Power MOSFET in TO-220FP package
Package
TO-220FP
Lifecycle Status
Obsolete
Datasheet
PDF STF6N65M2 Datasheet
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Technical Specifications

STMicroelectronics STF6N65M2 MOSFETs technical specifications.

General

Series
MDmesh™
Package / Case
TO-220-3 Full Pack
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Obsolete
Vgs Th Max ID
4V @ 250µA
Gate Charge Qg Max Vgs
9.8 nC @ 10 V
Vgs Max
±25V
Input Capacitance Ciss Max Vds
226 pF @ 100 V
Power Dissipation Max
20W (Tc)

Alternate Parts Comparison (STF6N65M2 vs STF23N80K5 vs STF24N60M6 vs STF4N62K3)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
SeriesMDmesh™MDmesh™ K5MDmesh™ M6SuperMESH3™
Package / CaseTO-220-3 Full PackTO-220-3 Full PackTO-220-3 Full PackTO-220-3 Full Pack
Mounting TypeThrough HoleThrough HoleThrough HoleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)150°C (TJ)
Lifecycle StatusObsoleteActiveActiveActive
Current Continuous Drain ID 25 C4A (Tc)16A (Tc)17A (Tj)3.8A (Tc)
Description--------
Detailed Description--------
Drain to Source Voltage Vdss650 V800 V600 V620 V
Drive Voltage Max Rds on Min Rds on10V10V10V10V
Fet TypeN-ChannelN-ChannelN-ChannelN-Channel
Gate Charge Qg Max Vgs9.8 nC @ 10 V33 nC @ 10 V23 nC @ 10 V22 nC @ 10 V
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