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STMicroelectronics STD80N4F6 MOSFETs

N-Ch MOSFET 40V 80A 6mR DPAK Power Transistor

2,500 ActiveSTMicroelectronicsSTD80NDPAK$1.32
STD80N4F6 - No Image Available

Same model may have multiple batches, images only for reference.

STD80N4F6
Manufacturer
Part Number (MPN)
STD80N4F6
Base Model
Detailed Description
N-Ch MOSFET 40V 80A 6mR DPAK Power Transistor
Package
DPAK
Lifecycle Status
Active
Datasheet
PDF STD80N4F6 Datasheet
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Ordering Code Family

STD80N groups multiple orderable suffixes under one base device. Compare package, grade, and reel options on the base-number page before substituting within the family.

6 ordering variants listed on the family page.

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Technical Specifications

STMicroelectronics STD80N4F6 MOSFETs technical specifications.

General

Series
DeepGATE™, STripFET™ VI
Package / Case
TO-252-3, DPAK
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 175°C (TJ)
Lifecycle Status
Active
Gate Charge Qg Max Vgs
36 nC @ 10 V
Vgs Max
±20V
Input Capacitance Ciss Max Vds
2150 pF @ 25 V
Power Dissipation Max
70W (Tc)
Fet Type
N-Channel

Alternate Parts Comparison (STD80N4F6 vs STD80N3LL vs STD80N240K6 vs STD80N6F7)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseTO-252-3, DPAKTO-252-3, DPAKTO-252-3, DPAKTO-252-3, DPAK
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Lifecycle StatusActiveActiveActiveActive
Current Continuous Drain ID 25 C80A (Tc)80A (Tc)16A (Tc)40A (Tc)
Description--------
Detailed Description--------
Drain to Source Voltage Vdss40 V30 V800 V60 V
Drive Voltage Max Rds on Min Rds on10V4.5V, 10V10V10V
Fet TypeN-ChannelN-ChannelN-ChannelN-Channel
Gate Charge Qg Max Vgs36 nC @ 10 V18 nC @ 4.5 V25.9 nC @ 10 V25 nC @ 10 V
Input Capacitance Ciss Max Vds2150 pF @ 25 V1640 pF @ 25 V1350 pF @ 400 V1600 pF @ 30 V
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