STMicroelectronics STD80N4F6 MOSFETs
N-Ch MOSFET 40V 80A 6mR DPAK Power Transistor

Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
STD80N4F6
Base Model
Detailed Description
N-Ch MOSFET 40V 80A 6mR DPAK Power Transistor
Package
DPAK
Lifecycle Status
Active
Datasheet
STD80N4F6 Datasheet
Quick Jump:
Technical Specifications
STMicroelectronics STD80N4F6 MOSFETs technical specifications.
General
Series
DeepGATE™, STripFET™ VI
Package / Case
TO-252-3, DPAK
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 175°C (TJ)
Lifecycle Status
Active
Description
MOSFET N-CH 40V 80A DPAK
Detailed Description
N-Channel 40 V 80A (Tc) 70W (Tc) Surface Mount DPAK
Gate Charge Qg Max Vgs
36 nC @ 10 V
Vgs Max
±20V
Input Capacitance Ciss Max Vds
2150 pF @ 25 V
Alternate Parts Comparison (STD80N4F6 vs STD80N3LL vs STD80N240K6 vs STD80N6F7)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | TO-252-3, DPAK | TO-252-3, DPAK | TO-252-3, DPAK | TO-252-3, DPAK |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) |
| Lifecycle Status | Active | Active | Active | Active |
| Current Continuous Drain ID 25 C | 80A (Tc) | 80A (Tc) | 16A (Tc) | 40A (Tc) |
| Description | MOSFET N-CH 40V 80A DPAK | MOSFET N-CH 30V 80A DPAK | N-CHANNEL 800 V, 197 MOHM TYP., | MOSFET N-CH 60V 40A DPAK |
| Detailed Description | N-Channel 40 V 80A (Tc) 70W (Tc) Surface Mount DPAK | N-Channel 30 V 80A (Tc) 75W (Tc) Surface Mount TO-252 (DPAK) | N-Channel 800 V 16A (Tc) 105W (Tc) Surface Mount TO-252 (DPAK) | N-Channel 60 V 40A (Tc) 100W (Tc) Surface Mount TO-252 (DPAK) |
| Drain to Source Voltage Vdss | 40 V | 30 V | 800 V | 60 V |
| Drive Voltage Max Rds on Min Rds on | 10V | 4.5V, 10V | 10V | 10V |
| Fet Type | N-Channel | N-Channel | N-Channel | N-Channel |
| Gate Charge Qg Max Vgs | 36 nC @ 10 V | 18 nC @ 4.5 V | 25.9 nC @ 10 V | 25 nC @ 10 V |
| Input Capacitance Ciss Max Vds | 2150 pF @ 25 V | 1640 pF @ 25 V | 1350 pF @ 400 V | 1600 pF @ 30 V |
| Action |
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