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STMicroelectronics STD4NK80Z-1 MOSFETs

N-channel 800 V, 2.7 Ohm typ., 3 A SuperMESH Power MOSFET in an IPAK package

3,000 ActiveSTMicroelectronicsTO-251 (IPAK)$2.40
STD4NK80Z-1 TO-251 (IPAK) package illustration

Same model may have multiple batches, images only for reference.

STD4NK80Z-1
Manufacturer
Part Number (MPN)
STD4NK80Z-1
Detailed Description
N-channel 800 V, 2.7 Ohm typ., 3 A SuperMESH Power MOSFET in an IPAK package
Package
TO-251 (IPAK)
Lifecycle Status
Active
Datasheet
PDF STD4NK80Z-1 Datasheet
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Technical Specifications

STMicroelectronics STD4NK80Z-1 MOSFETs technical specifications.

General

Series
SuperMESH™
Package / Case
TO-251-3 Short Leads, IPAK, TO-251AA
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Vgs Th Max ID
4.5V @ 50µA
Gate Charge Qg Max Vgs
22.5 nC @ 10 V
Vgs Max
±30V
Input Capacitance Ciss Max Vds
575 pF @ 25 V
Power Dissipation Max
80W (Tc)

Alternate Parts Comparison (STD4NK80Z-1 vs STD80N6F7 vs STD9N80K5 vs STDRIVE601TR)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseTO-251-3 Short Leads, IPAK, TO-251AATO-252-3, DPAKTO-252-3, DPAK28-SOIC
Mounting TypeThrough HoleSurface MountSurface MountSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 150°C (TJ)-40°C ~ 125°C (TJ)
Lifecycle StatusActiveActiveActiveActive
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)Power MOSFET, IGBT
SeriesSuperMESH™STripFET™ F7MDmesh™ K5--
Current Continuous Drain ID 25 C3A (Tc)40A (Tc)7A (Tc)--
Drain to Source Voltage Vdss800 V60 V800 V--
Drive Voltage Max Rds on Min Rds on10V10V10V--
Fet TypeN-ChannelN-ChannelN-Channel--
Gate Charge Qg Max Vgs22.5 nC @ 10 V25 nC @ 10 V12 nC @ 10 V--
Input Capacitance Ciss Max Vds575 pF @ 25 V1600 pF @ 30 V340 pF @ 100 V--
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