STMicroelectronics STD4NK60Z-1 MOSFETs
600V 4A N-CH MOSFET, 2 Ohm, IPAK, Through Hole
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
STD4NK60Z-1
Detailed Description
600V 4A N-CH MOSFET, 2 Ohm, IPAK, Through Hole
Package
IPAK
Lifecycle Status
Not For New Designs
Datasheet
STD4NK60Z-1 Datasheet
Quick Jump:
Technical Specifications
STMicroelectronics STD4NK60Z-1 MOSFETs technical specifications.
General
Series
SuperMESH™
Package / Case
TO-251-3 Short Leads, IPAK, TO-251AA
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Not For New Designs
Vgs Th Max ID
4.5V @ 50µA
Gate Charge Qg Max Vgs
26 nC @ 10 V
Vgs Max
±30V
Input Capacitance Ciss Max Vds
510 pF @ 25 V
Power Dissipation Max
70W (Tc)
Alternate Parts Comparison (STD4NK60Z-1 vs STD80N6F7 vs STD9N80K5 vs STDRIVE601TR)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA | TO-252-3, DPAK | TO-252-3, DPAK | 28-SOIC |
| Mounting Type | Through Hole | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | -40°C ~ 125°C (TJ) |
| Lifecycle Status | Not For New Designs | Active | Active | Active |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | Power MOSFET, IGBT |
| Series | SuperMESH™ | STripFET™ F7 | MDmesh™ K5 | -- |
| Current Continuous Drain ID 25 C | 4A (Tc) | 40A (Tc) | 7A (Tc) | -- |
| Drain to Source Voltage Vdss | 600 V | 60 V | 800 V | -- |
| Drive Voltage Max Rds on Min Rds on | 10V | 10V | 10V | -- |
| Fet Type | N-Channel | N-Channel | N-Channel | -- |
| Gate Charge Qg Max Vgs | 26 nC @ 10 V | 25 nC @ 10 V | 12 nC @ 10 V | -- |
| Input Capacitance Ciss Max Vds | 510 pF @ 25 V | 1600 pF @ 30 V | 340 pF @ 100 V | -- |
| Action |
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