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STMicroelectronics STD11N50M2 MOSFETs

N-channel 500 V, 0.45 Ohm typ., 8 A MDmesh M2 Power MOSFET in DPAK package

5,000 ActiveSTMicroelectronicsSTD11NDPAK$0.97
STD11N50M2 DPAK package illustration

Same model may have multiple batches, images only for reference.

STD11N50M2
Manufacturer
Part Number (MPN)
STD11N50M2
Base Model
Detailed Description
N-channel 500 V, 0.45 Ohm typ., 8 A MDmesh M2 Power MOSFET in DPAK package
Package
DPAK
Lifecycle Status
Active
Datasheet
PDF STD11N50M2 Datasheet
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Ordering Code Family

STD11N groups multiple orderable suffixes under one base device. Compare package, grade, and reel options on the base-number page before substituting within the family.

5 ordering variants listed on the family page.

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Technical Specifications

STMicroelectronics STD11N50M2 MOSFETs technical specifications.

General

Series
MDmesh™ II Plus
Package / Case
TO-252-3, DPAK
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Vgs Th Max ID
4V @ 250µA
Gate Charge Qg Max Vgs
12 nC @ 10 V
Vgs Max
±25V
Input Capacitance Ciss Max Vds
395 pF @ 100 V
Power Dissipation Max
85W (Tc)

Related Parts Comparison (STD11N50M2 vs STD11N60M6 vs STD11N60DM2 vs STD11N65M5)

Side-by-side specifications of related catalog parts.

Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.

This PartRelated PartRelated PartRelated Part
Package / CaseTO-252-3, DPAKTO-252-3, DPAKTO-252-3, DPAKTO-252-3, DPAK
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)150°C (TJ)
Lifecycle StatusActiveActiveActiveActive
Current Continuous Drain ID 25 C8A (Tc)8A (Tc)10A (Tc)9A (Tc)
Drain to Source Voltage Vdss500 V600 V650 V650 V
Drive Voltage Max Rds on Min Rds on10V10V10V10V
Fet TypeN-ChannelN-ChannelN-ChannelN-Channel
Gate Charge Qg Max Vgs12 nC @ 10 V10.3 nC @ 10 V16.5 nC @ 10 V17 nC @ 10 V
Input Capacitance Ciss Max Vds395 pF @ 100 V387 pF @ 100 V614 pF @ 100 V620 pF @ 100 V
Power Dissipation Max85W (Tc)90W (Tc)110W (Tc)85W (Tc)
Rds on Max ID Vgs530mOhm @ 4A, 10V520mOhm @ 4A, 10V420mOhm @ 5A, 10V480mOhm @ 4.5A, 10V
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