STMicroelectronics STD11N50M2 MOSFETs
N-channel 500 V, 0.45 Ohm typ., 8 A MDmesh M2 Power MOSFET in DPAK package

Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
STD11N50M2
Base Model
Detailed Description
N-channel 500 V, 0.45 Ohm typ., 8 A MDmesh M2 Power MOSFET in DPAK package
Package
DPAK
Lifecycle Status
Active
Datasheet
STD11N50M2 Datasheet
Quick Jump:
Technical Specifications
STMicroelectronics STD11N50M2 MOSFETs technical specifications.
General
Series
MDmesh™ II Plus
Package / Case
TO-252-3, DPAK
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Description
MOSFET N-CH 500V 8A DPAK
Detailed Description
N-Channel 500 V 8A (Tc) 85W (Tc) Surface Mount DPAK
Vgs Th Max ID
4V @ 250µA
Gate Charge Qg Max Vgs
12 nC @ 10 V
Vgs Max
±25V
Alternate Parts Comparison (STD11N50M2 vs STD11N60M6 vs STD11N60DM2 vs STD11N65M5)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | TO-252-3, DPAK | TO-252-3, DPAK | TO-252-3, DPAK | TO-252-3, DPAK |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | 150°C (TJ) |
| Lifecycle Status | Active | Active | Active | Active |
| Current Continuous Drain ID 25 C | 8A (Tc) | 8A (Tc) | 10A (Tc) | 9A (Tc) |
| Description | MOSFET N-CH 500V 8A DPAK | DISCRETE | MOSFET N-CH 650V 10A DPAK | MOSFET N CH 650V 9A DPAK |
| Detailed Description | N-Channel 500 V 8A (Tc) 85W (Tc) Surface Mount DPAK | N-Channel 600 V 8A (Tc) 90W (Tc) Surface Mount TO-252 (DPAK) | N-Channel 650 V 10A (Tc) 110W (Tc) Surface Mount DPAK | N-Channel 650 V 9A (Tc) 85W (Tc) Surface Mount DPAK |
| Drain to Source Voltage Vdss | 500 V | 600 V | 650 V | 650 V |
| Drive Voltage Max Rds on Min Rds on | 10V | 10V | 10V | 10V |
| Fet Type | N-Channel | N-Channel | N-Channel | N-Channel |
| Gate Charge Qg Max Vgs | 12 nC @ 10 V | 10.3 nC @ 10 V | 16.5 nC @ 10 V | 17 nC @ 10 V |
| Input Capacitance Ciss Max Vds | 395 pF @ 100 V | 387 pF @ 100 V | 614 pF @ 100 V | 620 pF @ 100 V |
| Action |
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