STMicroelectronics FDP12N60NZ MOSFETs
MOSFET N-CH 600V 9A IPAK
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
FDP12N60NZ
Detailed Description
MOSFET N-CH 600V 9A IPAK
Package
TO-220-3
Lifecycle Status
Active
Datasheet
FDP12N60NZ Datasheet
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Technical Specifications
STMicroelectronics FDP12N60NZ MOSFETs technical specifications.
General
Series
FDP12N60NZ
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
Through Hole
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
600 V
ID Continuous Drain Current
12 A
Rds on Drain Source Resistance
530 mOhms
Vgs Gate Source Voltage
- 30 V, + 30 V
Alternate Parts Comparison (FDP12N60NZ vs IRF640NPBF vs STD80N6F7 vs STD9N80K5)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Series | FDP12N60NZ | -- | STripFET™ F7 | MDmesh™ K5 |
| Mounting Type | Through Hole | -- | Surface Mount | Surface Mount |
| Technology | Si | -- | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| RoHS | Yes | Yes | -- | -- |
| Package | TO-220-3 | TO-220AB | -- | -- |
| Number of Channels | 1 Channel | -- | -- | -- |
| Channel Mode | Enhancement | -- | -- | -- |
| Configuration | Single | -- | -- | -- |
| Fall Time | 60 ns | -- | -- | -- |
| Forward Transconductance Min | 13.5 S | -- | -- | -- |
| ID Continuous Drain Current | 12 A | -- | -- | -- |
| Maximum Operating Temperature C | + 150 | -- | -- | -- |
| Action |
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