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STMicroelectronics FDP12N60NZ MOSFETs

MOSFET N-CH 600V 9A IPAK

1,988 ActiveSTMicroelectronicsTO-220-3$1.18
FDP12N60NZ TO-220-3 package illustration

Same model may have multiple batches, images only for reference.

FDP12N60NZ
Manufacturer
Part Number (MPN)
FDP12N60NZ
Detailed Description
MOSFET N-CH 600V 9A IPAK
Package
TO-220-3
Lifecycle Status
Active
Datasheet
PDF FDP12N60NZ Datasheet
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Technical Specifications

STMicroelectronics FDP12N60NZ MOSFETs technical specifications.

General

Series
FDP12N60NZ
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
Through Hole
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
600 V
ID Continuous Drain Current
12 A
Rds on Drain Source Resistance
530 mOhms
Vgs Gate Source Voltage
- 30 V, + 30 V

Alternate Parts Comparison (FDP12N60NZ vs IRF640NPBF vs STD80N6F7 vs STD9N80K5)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
SeriesFDP12N60NZ--STripFET™ F7MDmesh™ K5
Mounting TypeThrough Hole--Surface MountSurface Mount
TechnologySi--MOSFET (Metal Oxide)MOSFET (Metal Oxide)
RoHSYesYes----
PackageTO-220-3TO-220AB----
Number of Channels1 Channel------
Channel ModeEnhancement------
ConfigurationSingle------
Fall Time60 ns------
Forward Transconductance Min13.5 S------
ID Continuous Drain Current12 A------
Maximum Operating Temperature C+ 150------
Action

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