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STMicroelectronics 2STR1160 BJTs

NPN BJT Transistor, 60V, 1A, SOT-23, 500mW, SMD

66 ActiveSTMicroelectronicsTO-236-3, SC-59, SOT-23-3$0.86
2STR1160 TO-236-3, SC-59, SOT-23-3 package illustration

Same model may have multiple batches, images only for reference.

2STR1160
Manufacturer
Part Number (MPN)
2STR1160
Detailed Description
NPN BJT Transistor, 60V, 1A, SOT-23, 500mW, SMD
Package
TO-236-3, SC-59, SOT-23-3
Lifecycle Status
Active
Datasheet
PDF 2STR1160 Datasheet
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Technical Specifications

STMicroelectronics 2STR1160 BJTs technical specifications.

General

RoHS
Yes
Package / Case
TO-236-3, SC-59, SOT-23-3
Mounting Type
Surface Mount
Operating Temperature
150°C (TJ)
Lifecycle Status
Active
Current Collector Cutoff Max
100nA (ICBO)
Dc Current Gain Hfe Min IC Vce
180 @ 500mA, 2V
Power Max
500 mW
Transistor Type
NPN
Current Collector IC Max
1 A

Related Parts Comparison (2STR1160 vs MJE3055T vs TIP31A vs ST13003)

Side-by-side specifications of related catalog parts.

Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.

This PartRelated PartRelated PartRelated Part
Mounting TypeSurface MountThrough HoleThrough HoleThrough Hole
Operating Temperature150°C (TJ)150°C (TJ)150°C (TJ)-65 °C ~ 150 °C
RoHSYesCompliantCompliantCompliant
Lifecycle StatusActiveProductionProductionProduction
PackageSOT23-3TO-220TO-220SOT-32
Package / CaseTO-236-3, SC-59, SOT-23-3TO-220-3TO-220-3--
Current Collector Cutoff Max100nA (ICBO)700µA300µA--
Current Collector IC Max1 A10 A3 A--
Dc Current Gain Hfe Min IC Vce180 @ 500mA, 2V20 @ 4A, 4V10 @ 3A, 4V--
Power Max500 mW75 W2 W--
Transistor TypeNPNNPNNPN--
Vce Saturation Max Ib IC430mV @ 100mA, 1A8V @ 3.3A, 10A1.2V @ 375mA, 3A--
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