STMicroelectronics 2STR1160 BJTs
NPN BJT Transistor, 60V, 1A, SOT-23, 500mW, SMD
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
2STR1160
Detailed Description
NPN BJT Transistor, 60V, 1A, SOT-23, 500mW, SMD
Package
TO-236-3, SC-59, SOT-23-3
Lifecycle Status
Active
Datasheet
2STR1160 Datasheet
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Technical Specifications
STMicroelectronics 2STR1160 BJTs technical specifications.
General
Package / Case
TO-236-3, SC-59, SOT-23-3
Mounting Type
Surface Mount
Operating Temperature
150°C (TJ)
Lifecycle Status
Active
Current Collector Cutoff Max
100nA (ICBO)
Dc Current Gain Hfe Min IC Vce
180 @ 500mA, 2V
Power Max
500 mW
Transistor Type
NPN
Current Collector IC Max
1 A
Voltage Collector Emitter Breakdown Max
60 V
Alternate Parts Comparison (2STR1160 vs MJE3055T vs TIP31A vs ST13003)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | Surface Mount | Through Hole | Through Hole | Through Hole |
| Operating Temperature | 150°C (TJ) | 150°C (TJ) | 150°C (TJ) | -65 °C ~ 150 °C |
| Number of Pins | -- | 3 | 3 | 3 |
| RoHS | -- | Compliant | Compliant | Compliant |
| Lifecycle Status | Active | Production | Production | Production |
| China ROHS | -- | Non-Compliant | Non-Compliant | Non-Compliant |
| Collector Base Voltage Vcbo | -- | 70 V | 60 V | 700 V |
| Collector Emitter Breakdown Voltage | -- | 60 V | 60 V | 400 V |
| Collector Emitter Saturation Voltage | -- | 8 V | 1.2 V | 3 V |
| Collector Emitter Voltage Vceo | -- | 60 V | 60 V | 400 V |
| Current Rating | -- | 10 A | 3 A | 1.5 A |
| Element Configuration | -- | Single | Single | Single |
| Action |
More Parts in BJTs
Browse additional parts from the same category, grouped by series, package type, and manufacturer. These are catalog suggestions — not verified pin-compatible alternates.
