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Samsung Semiconductor KLMCG4JETD-B0410 Flash Memory

Flash Memory IC 512G Serial e-MMC 200 MHz 3/3.3V

In Stock ActiveSamsung SemiconductorBGARoHS
KLMCG4JETD-B0410 BGA package illustration

Same model may have multiple batches, images only for reference.

KLMCG4JETD-B0410
Part Number (MPN)
KLMCG4JETD-B0410
Detailed Description
NAND Flash Serial e-MMC 3V/3.3V 512G-bit 512G/128G/64G x 1/4-bit/8-bit 153-Pin FBGA
Package
BGA
Lifecycle Status
Active
RoHS State
RoHS Compliant
Datasheet
PDF KLMCG4JETD-B0410 Datasheet
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Technical Specifications

Samsung Semiconductor KLMCG4JETD-B0410 Flash Memory technical specifications.

General

Interface
Serial e-MMC
Memory Size
512G
RoHS
Compliant
Number of Pins
153
Mounting Type
Surface Mount
Operating Temperature
-25 ~ 85
Supply Voltage
3/3.3
Lifecycle Status
Active
Automotive
No
PPAP
No

Related Parts Comparison (KLMCG4JETD-B0410 vs KLMAG1JETD-B041 vs K9F1208R0C-JIB0 vs K9F1208U0C-JIB0)

Side-by-side specifications of related catalog parts.

Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.

This PartRelated PartRelated PartRelated Part
Operating Temperature-25 ~ 85-25 ~ 85-40 ~ 85-40 ~ 85
Supply Voltage3/3.31.81.83.3
InterfaceSerial e-MMCFLASH CARDFLASHFLASH
Number of Words512G/128G/64G171798691846710886467108864
Number of Pins153--6363
RoHSCompliant--YesYes
Length--131313
Military Spec--NoNoNo
Number of Functions--111
Number of Words Code--160000000006400000064000000
Temperature Grade--OTHERINDUSTRIALINDUSTRIAL
Width--11.58.58.5
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