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Samsung Semiconductor K9F1G08U0F-SIB0 Memory ICs

["Featured Products", "IT infrastructure", "IT infrastructure Memory"]

38,382 ActiveSamsung SemiconductorTSOP$4.59
K9F1G08U0F-SIB0 TSOP package illustration

Same model may have multiple batches, images only for reference.

K9F1G08U0F-SIB0
Part Number (MPN)
K9F1G08U0F-SIB0
Detailed Description
["Featured Products", "IT infrastructure", "IT infrastructure Memory"]
Package
TSOP
Lifecycle Status
Active
Datasheet
PDF K9F1G08U0F-SIB0 Datasheet
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Technical Specifications

Samsung Semiconductor K9F1G08U0F-SIB0 Memory ICs technical specifications.

General

RoHS
Yes
Part Number
K9F1G08U0F-SIB0
Type
NAND Flash
Capacity
1Gb
Configuration
128Mx8
Max Read Speed
25 ns
Max Write Speed
200 µs
Programming Cycles
100k
Erase Cycles
100k
Package
TSOP

Alternate Parts Comparison (K9F1G08U0F-SIB0 vs K9F1208R0C-JIB0 vs K9F1208U0C-JIB0 vs KFG1G16U2C-AIB6)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
RoHSYesYesYesYes
Capacity1Gb------
Configuration128Mx8------
Erase Cycles100k------
Max Read Speed25 ns------
Max Write Speed200 µs------
PackageTSOP------
Part NumberK9F1G08U0F-SIB0------
Programming Cycles100k------
TypeNAND Flash------
Operating Temperature---40 ~ 85-40 ~ 85-40 ~ 85
Supply Voltage--1.83.33.3
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