Samsung Semiconductor KFG1216U2B-DIB6000 Flash Memory
NAND Flash Parallel/Serial 3.3V 512M-bit 32M x 16 76ns 63-Pin FBGA Tray
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
KFG1216U2B-DIB6000
Detailed Description
NAND Flash Parallel/Serial 3.3V 512M-bit 32M x 16 76ns 63-Pin FBGA Tray
Package
FBGA
Lifecycle Status
Active
RoHS State
RoHS Compliant
Datasheet
KFG1216U2B-DIB6000 Datasheet
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Technical Specifications
Samsung Semiconductor KFG1216U2B-DIB6000 Flash Memory technical specifications.
General
Interface
Serial, Parallel
RoHS
Compliant
Package / Case
FBGA
Mounting Type
Surface Mount
Operating Temperature
-40°C ~ 85°C
Supply Voltage
3.3V
Access Time Max
76ns
Address Bus Width
16b
Density
512Mb
Memory Type
NAND,
Alternate Parts Comparison (KFG1216U2B-DIB6000 vs KFG1G16U2C-AIB6 vs KFG1216U2B-DIB6 vs KFG5616U1A-PIB5)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Operating Temperature | -40°C ~ 85°C | -40 ~ 85 | -40 ~ 85 | -40 ~ 85 |
| RoHS | Compliant | Yes | Yes | Yes |
| Access Time Max | 76ns | 76 | 70 | 14.5 |
| Number of Pins | -- | 63 | 63 | 48 |
| Jedec Package Code | -- | R-PBGA-B63 | R-PBGA-B63 | R-PDSO-G48 |
| Memory IC Type | -- | FLASH | FLASH | FLASH |
| Military Spec | -- | False | False | False |
| Number of Words | -- | 67108864 | 33554432 | 16777216 |
| Number of Words Code | -- | 64000000 | 32000000 | 16000000 |
| Parallel Serial | -- | PARALLEL | PARALLEL | PARALLEL |
| Supply Voltage Nom Vsup | -- | 3.3 | 3.3 | 3.3 |
| Temperature Grade | -- | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL |
| Action |
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