Samsung Semiconductor K4T51163QI-HCE6 DRAM
DDR DRAM, 32MX16, 0.45ns, CMOS, PBGA84,

Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
K4T51163QI-HCE6
Detailed Description
DDR DRAM, 32MX16, 0.45ns, CMOS, PBGA84,
Package
BGA
Lifecycle Status
Obsolete
RoHS State
RoHS Compliant
Datasheet
K4T51163QI-HCE6 Datasheet
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Technical Specifications
Samsung Semiconductor K4T51163QI-HCE6 DRAM technical specifications.
General
Interface
SSTL_1.8
Memory Size
512M
RoHS
Compliant
Number of Pins
84
Mounting Type
Surface Mount
Operating Temperature
0 ~ 95
Supply Voltage
1.7 ~ 1.9
Lifecycle Status
Obsolete
Automotive
No
Ppap
No
Alternate Parts Comparison (K4T51163QI-HCE6 vs K4B4G1646D-BHMA vs K4E6E304EC-EGCG vs K4A8G165WC-BCRC)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | 0 ~ 95 | -40 ~ 105 | -25 ~ 85 | 0 ~ 85 |
| Memory Size | 512M | 4G | 16G | 8G |
| Number of Pins | 84 | 96 | 178 | 96 |
| RoHS | Compliant | Supplier Unconfirmed | Compliant | Supplier Unconfirmed |
| Lifecycle Status | Obsolete | Obsolete | Obsolete | Active |
| Automotive | No | No | No | No |
| Data Bus Width Bit | 16 | 16 | 32 | 16 |
| Dram Type | DDR2 SDRAM | DDR3 SDRAM | Mobile LPDDR3 SDRAM | DRAM |
| Maximum Clock Rate Mhz | 667 | 1866 | 2133 | 2400 |
| Number of IO Lines Bit | 16 | 16 | 32 | 16 |
| Organization | 32Mx16 | 256Mx16 | 512Mx32 | 512Mx16 |
| Action |
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