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Samsung Semiconductor K4A4G165WE-BIWE DRAM

4Gb E-die DDR4 SDRAM

396Samsung SemiconductorBGA$18.89RoHS
K4A4G165WE-BIWE - No Image Available

Same model may have multiple batches, images only for reference.

K4A4G165WE-BIWE
Part Number (MPN)
K4A4G165WE-BIWE
Detailed Description
4Gb E-die DDR4 SDRAM
Package
BGA
Lifecycle Status
Last Time Buy
RoHS State
RoHS Compliant
Datasheet
PDF K4A4G165WE-BIWE Datasheet
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Technical Specifications

Samsung Semiconductor K4A4G165WE-BIWE DRAM technical specifications.

General

Interface
POD
Memory Size
4G
RoHS
Compliant
Number of Pins
96
Mounting Type
Surface Mount
Supply Voltage
1.2
Lifecycle Status
LTB
Number of Bits Word Bit
16
Number of IO Lines Bit
16
Organization
256Mx16

Alternate Parts Comparison (K4A4G165WE-BIWE vs K4B4G1646D-BHMA vs K4E6E304EC-EGCG vs K4A8G165WC-BCRC)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Memory Size4G4G16G8G
Number of Pins969617896
RoHSCompliantSupplier UnconfirmedCompliantSupplier Unconfirmed
Lifecycle StatusLTBObsoleteObsoleteActive
AutomotiveNoNoNoNo
Data Bus Width Bit16163216
Dram TypeDDR4 SDRAMDDR3 SDRAMMobile LPDDR3 SDRAMDRAM
Number of IO Lines Bit16163216
Organization256Mx16256Mx16512Mx32512Mx16
PackageBGABGABGABGA
PpapNoNoNoNo
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