Samsung Semiconductor K4A4G165WE-BIWE DRAM
4Gb E-die DDR4 SDRAM
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
K4A4G165WE-BIWE
Detailed Description
Package
BGA
Key Features
Package: BGA; Mounting Type: Surface Mount; Supply Voltage: 1.2; Memory Size: 4G; Interface: POD
Lifecycle Status
LTB
RoHS State
Compliant
Datasheet
K4A4G165WE-BIWE Datasheet
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Technical Specifications
Samsung Semiconductor K4A4G165WE-BIWE DRAM technical specifications.
General
Number of Bits Word Bit
16
Number of IO Lines Bit
16
Organization
256Mx16
HTS
EA
ECCN
EAR99
Ppap
No
Package Length
13.3
Data Bus Width Bit
16
Package
BGA
Automotive
No
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