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ROHM VS4V5BU1QST18R BJTs

Discrete Semiconductors--Transistors--Bipolar (BJT)--Single Bipolar Transistors

65 ActiveROHM$0.20
VS4V5BU1QST18R package illustration

Same model may have multiple batches, images only for reference.

VS4V5BU1QST18R
Manufacturer
Part Number (MPN)
VS4V5BU1QST18R
Detailed Description
Discrete Semiconductors--Transistors--Bipolar (BJT)--Single Bipolar Transistors
Lifecycle Status
Active
Datasheet
PDF VS4V5BU1QST18R Datasheet
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Technical Specifications

ROHM VS4V5BU1QST18R BJTs technical specifications.

General

Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TA)
Lifecycle Status
Active
Applications
General Purpose
Bidirectional Channels
1
Current Peak Pulse 10 1000 S
50A (8/20µs)
Power Peak Pulse
600 W
Power Line Protection
No
Type
Zener
Voltage Breakdown Min
5.3 V

Related Parts Comparison (VS4V5BU1QST18R vs VS5V0BA1EST15R vs VS3V3BC1HST15R vs VS3V3BA1EST15R)

Side-by-side specifications of related catalog parts.

Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.

This PartRelated PartRelated PartRelated Part
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Operating Temperature-55°C ~ 150°C (TA)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TA)-55°C ~ 150°C (TJ)
Lifecycle StatusActiveActiveActiveActive
ApplicationsGeneral PurposeGeneral PurposeGeneral PurposeGeneral Purpose
Bidirectional Channels1111
Current Peak Pulse 10 1000 S50A (8/20µs)1A (8/20µs)8.2A (8/20µs)3.5A (8/20µs)
Power Line ProtectionNoNoNoNo
TypeZenerZenerZenerZener
Voltage Clamping Max Ipp12 V10 V8.5 V8 V
Voltage Reverse Standoff Typ4.5V (Max)5V (Max)3.3V (Max)3.3V (Max)
Power Peak Pulse600 W--70 W28 W
Voltage Breakdown Min5.3 V--4 V4 V
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