ROHM VS4V5BU1QST18R BJTs
Discrete Semiconductors--Transistors--Bipolar (BJT)--Single Bipolar Transistors
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
VS4V5BU1QST18R
Detailed Description
Discrete Semiconductors--Transistors--Bipolar (BJT)--Single Bipolar Transistors
Lifecycle Status
Active
Datasheet
VS4V5BU1QST18R Datasheet
Quick Jump:
Technical Specifications
ROHM VS4V5BU1QST18R BJTs technical specifications.
General
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TA)
Lifecycle Status
Active
Applications
General Purpose
Bidirectional Channels
1
Current Peak Pulse 10 1000 S
50A (8/20µs)
Power Peak Pulse
600 W
Power Line Protection
No
Type
Zener
Voltage Breakdown Min
5.3 V
Alternate Parts Comparison (VS4V5BU1QST18R vs VS5V0BA1EST15R vs VS3V3BC1HST15R vs VS3V3BA1EST15R)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TA) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TA) | -55°C ~ 150°C (TJ) |
| Lifecycle Status | Active | Active | Active | Active |
| Applications | General Purpose | General Purpose | General Purpose | General Purpose |
| Bidirectional Channels | 1 | 1 | 1 | 1 |
| Current Peak Pulse 10 1000 S | 50A (8/20µs) | 1A (8/20µs) | 8.2A (8/20µs) | 3.5A (8/20µs) |
| Power Line Protection | No | No | No | No |
| Type | Zener | Zener | Zener | Zener |
| Voltage Clamping Max Ipp | 12 V | 10 V | 8.5 V | 8 V |
| Voltage Reverse Standoff Typ | 4.5V (Max) | 5V (Max) | 3.3V (Max) | 3.3V (Max) |
| Power Peak Pulse | 600 W | -- | 70 W | 28 W |
| Voltage Breakdown Min | 5.3 V | -- | 4 V | 4 V |
| Action |