ROHM RGS00TS65DHRC11 BJTs
IGBT TRNCH FIELD 650V 88A TO247N
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
RGS00TS65DHRC11
Detailed Description
IGBT TRNCH FIELD 650V 88A TO247N
Package
TO-247-3
Lifecycle Status
Not For New Designs
Datasheet
RGS00TS65DHRC11 Datasheet
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Technical Specifications
ROHM RGS00TS65DHRC11 BJTs technical specifications.
General
Series
Automotive, AEC-Q101
RoHS
ROHS3 Compliant
Package / Case
TO-247-3
Packaging
Tube
Mounting Type
Through Hole
Operating Temperature
-40°C ~ 175°C (TJ)
Lifecycle Status
Not For New Designs
Collector Emitter Voltage Vceo Max
650 V
Collector Emitter Saturation Voltage
2.1 V
Configuration
Single
Related Parts Comparison (RGS00TS65DHRC11 vs RGS80TSX2DHRC11 vs RGS80TSX2HRC11 vs DTA143EM3T5G)
Side-by-side specifications of related catalog parts.
Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.
| This Part | Related Part | Related Part | Related Part | |
|---|---|---|---|---|
| RoHS | ROHS3 Compliant | Yes | Yes | Yes |
| Mounting Type | Through Hole | Through Hole | Through Hole | -- |
| Collector Emitter Saturation Voltage | 2.1 V | 1.7 V | 1.7 V | -- |
| Collector Emitter Voltage Vceo Max | 650 V | 1.2 kV | 1.2 kV | -- |
| Configuration | Single | Single | Single | -- |
| Continuous Collector Current at 25 C | 88 A | 80 A | 80 A | -- |
| Gate Emitter Leakage Current | 200 nA | 500 nA | 500 nA | -- |
| Maximum Gate Emitter Voltage | 30 V | - 30 V, 30 V | - 30 V, 30 V | -- |
| Pd Power Dissipation | 326 W | 555 W | 555 W | -- |
| Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 | -- |
| Technology | Si | Si | Si | -- |
| Package | -- | TO-247-3 | TO-247-3 | SOT-723 |
| Action |
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