ROHM R8002CND3FRATL MOSFETs
MOSFET N-CH 800V 2A TO252
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
R8002CND3FRATL
Detailed Description
MOSFET N-CH 800V 2A TO252
Package
TO-252
Lifecycle Status
Active
Datasheet
R8002CND3FRATL Datasheet
Quick Jump:
Technical Specifications
ROHM R8002CND3FRATL MOSFETs technical specifications.
General
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
800 V
ID Continuous Drain Current
2 A
Rds on Drain Source Resistance
4.3 Ohms
Vgs Gate Source Voltage
- 30 V, + 30 V
Alternate Parts Comparison (R8002CND3FRATL vs RUM002N02T2L)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | |
|---|---|---|
| Mounting Type | SMD/SMT | Surface Mount |
| Operating Temperature | - 55°C ~ + 150°C | -55 °C ~ 150 °C |
| Number of Channels | 1 Channel | 1 Channel |
| RoHS | Yes | Compliant |
| Channel Mode | Enhancement | Enhancement |
| Fall Time | 67 ns | 10 ns |
| Package | TO-252 | SOT-23 |
| Pd Power Dissipation | 69 W | 150 mW |
| Rds on Drain Source Resistance | 4.3 Ohms | 1.2 Ohms |
| Rise Time | 22 ns | 10 ns |
| Technology | Si | Si |
| Transistor Polarity | N-Channel | N-Channel |
| Action |
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