Renesas UPD48576118F1-E24-DW1-E2-A Memory Integrated Circuit
IC DRAM 576MBIT HSTL 144TFBGA
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
UPD48576118F1-E24-DW1-E2-A
Detailed Description
IC DRAM 576MBIT HSTL 144TFBGA
Package
144-TBGA
Key Features
Package / Case: 144-TBGA; Mounting Type: Surface Mount
Lifecycle Status
Obsolete
RoHS State
RoHS Compliant
Datasheet
UPD48576118F1-E24-DW1-E2-A Datasheet
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Technical Specifications
Renesas UPD48576118F1-E24-DW1-E2-A Memory Integrated Circuit technical specifications.
General
Memory Size
576Mb (32M x 18)
Package / Case
144-TBGA
Mounting Type
Surface Mount
Operating Temperature
0°C ~ 95°C (TC)
Supply Voltage
1.7V ~ 1.9V
Technology
LLDRAM2
Memory Type
Volatile
Max Frequency
400 MHz
Access Time
20 ns
Memory Format
DRAM
Alternate Parts Comparison (UPD48576118F1-E24-DW1-E2-A vs UPD44324362BF5-E40-FQ1 vs UPD44646183AF5-E25-FQ1-A vs UPD48576218F1-E24-DW1-E2-A)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | 144-TBGA | 165-LBGA | 165-LBGA | 144-TBGA |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | 0°C ~ 95°C (TC) | 0°C ~ 70°C (TA) | 0°C ~ 70°C (TA) | 0°C ~ 95°C (TC) |
| Supply Voltage | 1.7V ~ 1.9V | 1.7V ~ 1.9V | 1.7V ~ 1.9V | 1.7V ~ 1.9V |
| Memory Size | 576Mb (32M x 18) | 36 Mbit | 72 Mbit | 576Mb (32M x 18) |
| Max Frequency | 400 MHz | 250 MHz | 400 MHz | 400 MHz |
| Memory Format | DRAM | SRAM | SRAM | DRAM |
| Memory Interface | HSTL | Parallel | Parallel | HSTL |
| Memory Type | Volatile | Volatile | Volatile | Volatile |
| Technology | LLDRAM2 | SRAM - Synchronous, DDR II | SRAM - Synchronous, DDR II+ | LLDRAM2 |
| Lifecycle Status | -- | Obsolete | Obsolete | Obsolete |
| Memory Organization | -- | 1M x 36 | 4M x 18 | 32M x 18 |
| Action |
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