Renesas NESG3031M14-T3-A RF BJT
NESG3031M14-T3-A by Renesas · RF BJT · M14
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
NESG3031M14-T3-A
Package
M14
Lifecycle Status
Active
Datasheet
NESG3031M14-T3-A Datasheet
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Technical Specifications
Renesas NESG3031M14-T3-A RF BJT technical specifications.
General
RoHS
Yes
Mounting Type
SMD/SMT
Operating Temperature
- 65°C ~ + 150°C
Transistor Type
Bipolar
Technology
SiGe
Transistor Polarity
NPN
Emitter Base Voltage Vebo
1.5 V
Continuous Collector Current
35 mA
Configuration
Single
Collector Base Voltage Vcbo
12 V
Alternate Parts Comparison (NESG3031M14-T3-A vs NESG340034-T1-A vs NESG2021M16-T3-A vs NESG2031M05-T1-A)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | SMD/SMT | -- | Surface Mount | Surface Mount |
| RoHS | Yes | -- | ROHS3 Compliant | Yes |
| Transistor Type | Bipolar | -- | NPN | NPN |
| Package | M14 | -- | -- | SOT-343F |
| Operating Temperature | - 65°C ~ + 150°C | -- | -- | -- |
| Collector Base Voltage Vcbo | 12 V | -- | -- | -- |
| Configuration | Single | -- | -- | -- |
| Continuous Collector Current | 35 mA | -- | -- | -- |
| Dc Current Gain Hfe Max | 220 at 6 mA at 2 V | -- | -- | -- |
| Emitter Base Voltage Vebo | 1.5 V | -- | -- | -- |
| Pd Power Dissipation | 150 mW | -- | -- | -- |
| Technology | SiGe | -- | -- | -- |
| Action |
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