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Renesas ISL6620IRZ-T Gate Drivers

Half Bridge MOSFET 2A 4.5V~5.5V 2A DFN-10-EP(3x3) Gate Drive ICs

28,800Renesas10-VFDFN Exposed PadRoHS
ISL6620IRZ-T - No Image Available

Same model may have multiple batches, images only for reference.

ISL6620IRZ-T
Manufacturer
Part Number (MPN)
ISL6620IRZ-T
Detailed Description
Half Bridge MOSFET 2A 4.5V~5.5V 2A DFN-10-EP(3x3) Gate Drive ICs
Package
10-VFDFN Exposed Pad
Key Features
Package / Case: 10-VFDFN Exposed Pad
Lifecycle Status
Obsolete
RoHS State
RoHS Compliant
Datasheet
PDF ISL6620IRZ-T Datasheet
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Technical Specifications

Renesas ISL6620IRZ-T Gate Drivers technical specifications.

General

RoHS
True
Package / Case
10-VFDFN Exposed Pad
Operating Temperature
-40°C ~ 125°C (TJ)
Supply Voltage
4.5V ~ 5.5V
Lifecycle Status
Obsolete
Input Type
Non-Inverting
Channel Type
Synchronous
Gate Type
N-Channel MOSFET
Number of Drivers
2
Rise Fall Time Typ
8ns, 8ns

Alternate Parts Comparison (ISL6620IRZ-T vs ISL6620ACRZ-T vs ISL6615ACRZ vs ISL6615CRZ)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / Case10-VFDFN Exposed Pad10-VFDFN Exposed Pad10-VFDFN Exposed Pad10-VFDFN Exposed Pad
Operating Temperature-40°C ~ 125°C (TJ)0°C ~ 125°C (TJ)0°C ~ 125°C (TJ)0°C ~ 125°C (TJ)
Supply Voltage4.5V ~ 5.5V4.5V ~ 5.5V6.8V ~ 13.2V6.8V ~ 13.2V
Channel TypeSynchronousSynchronousSynchronousSynchronous
Current Peak Output Source Sink2A, 2A2A, 2A2.5A, 4A2.5A, 4A
Driven ConfigurationHalf-BridgeHalf-BridgeHalf-BridgeHalf-Bridge
Gate TypeN-Channel MOSFETN-Channel MOSFETN-Channel MOSFETN-Channel MOSFET
High Side Voltage Max Bootstrap36 V36 V36 V36 V
Input TypeNon-InvertingNon-InvertingNon-InvertingNon-Inverting
Rise Fall Time Typ8ns, 8ns8ns, 8ns13ns, 10ns13ns, 10ns
Mounting Type--Surface MountSurface MountSurface Mount
Number of Drivers2222
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