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Renesas ISL6594BCRZ-T Gate Drivers

IC GATE DRVR HALF-BRIDGE 10DFN

35,635Renesas10-VFDFN Exposed PadRoHS
ISL6594BCRZ-T - No Image Available

Same model may have multiple batches, images only for reference.

ISL6594BCRZ-T
Manufacturer
Part Number (MPN)
ISL6594BCRZ-T
Detailed Description
IC GATE DRVR HALF-BRIDGE 10DFN
Package
10-VFDFN Exposed Pad
Key Features
Package / Case: 10-VFDFN Exposed Pad; Mounting Type: Surface Mount
Lifecycle Status
Obsolete
RoHS State
RoHS Compliant
Datasheet
PDF ISL6594BCRZ-T Datasheet
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Technical Specifications

Renesas ISL6594BCRZ-T Gate Drivers technical specifications.

General

Package / Case
10-VFDFN Exposed Pad
Mounting Type
Surface Mount
Operating Temperature
0°C ~ 125°C (TJ)
Supply Voltage
10.8V ~ 13.2V
Input Type
Non-Inverting
Channel Type
Synchronous
Driven Configuration
Half-Bridge
Number of Drivers
2
Gate Type
N-Channel MOSFET
Current Peak Output Source Sink
1.25A, 2A

Alternate Parts Comparison (ISL6594BCRZ-T vs ISL6620IRZ-T vs ISL6620ACRZ-T vs ISL6615ACRZ)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / Case10-VFDFN Exposed Pad10-VFDFN Exposed Pad10-VFDFN Exposed Pad10-VFDFN Exposed Pad
Operating Temperature0°C ~ 125°C (TJ)-40°C ~ 125°C (TJ)0°C ~ 125°C (TJ)0°C ~ 125°C (TJ)
Supply Voltage10.8V ~ 13.2V4.5V ~ 5.5V4.5V ~ 5.5V6.8V ~ 13.2V
Channel TypeSynchronousSynchronousSynchronousSynchronous
Current Peak Output Source Sink1.25A, 2A2A, 2A2A, 2A2.5A, 4A
Driven ConfigurationHalf-BridgeHalf-BridgeHalf-BridgeHalf-Bridge
Gate TypeN-Channel MOSFETN-Channel MOSFETN-Channel MOSFETN-Channel MOSFET
High Side Voltage Max Bootstrap36 V36 V36 V36 V
Input TypeNon-InvertingNon-InvertingNon-InvertingNon-Inverting
Rise Fall Time Typ26ns, 18ns8ns, 8ns8ns, 8ns13ns, 10ns
Mounting TypeSurface Mount--Surface MountSurface Mount
Number of Drivers2--22
Action

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