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Renesas ISL6612AIBZ Gate Drivers

IC GATE DRVR HALF-BRIDGE 8SOIC

47,122 ActiveRenesas8-SOIC (0.154", 3.90mm Width)RoHS
ISL6612AIBZ - No Image Available

Same model may have multiple batches, images only for reference.

ISL6612AIBZ
Manufacturer
Part Number (MPN)
ISL6612AIBZ
Detailed Description
IC GATE DRVR HALF-BRIDGE 8SOIC
Package
8-SOIC (0.154", 3.90mm Width)
Key Features
Package / Case: 8-SOIC (0.154", 3.90mm Width); Mounting Type: Surface Mount
Lifecycle Status
Active
RoHS State
RoHS Compliant
Datasheet
PDF ISL6612AIBZ Datasheet
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Technical Specifications

Renesas ISL6612AIBZ Gate Drivers technical specifications.

General

Package / Case
8-SOIC
Mounting Type
Surface Mount
Operating Temperature
-40°C ~ 125°C (TJ)
Supply Voltage
10.8V ~ 13.2V
Input Type
Non-Inverting
Channel Type
Synchronous
Driven Configuration
Half-Bridge
Number of Drivers
2
Gate Type
N-Channel MOSFET
Current Peak Output Source Sink
1.25A, 2A

Alternate Parts Comparison (ISL6612AIBZ vs ISL6609AIBZ-T vs ISL2111ABZ-T vs ISL6209CB-T)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / Case8-SOIC8-SOIC8-SOIC8-SOIC
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Operating Temperature-40°C ~ 125°C (TJ)-40°C ~ 125°C (TJ)-40°C ~ 125°C (TJ)-10°C ~ 125°C (TJ)
Supply Voltage10.8V ~ 13.2V4.5V ~ 5.5V8V ~ 14V4.5V ~ 5.5V
Channel TypeSynchronousSynchronousIndependentSynchronous
Current Peak Output Source Sink1.25A, 2A-, 4A3A, 4A2A, 2A
Driven ConfigurationHalf-BridgeHalf-BridgeHalf-BridgeHalf-Bridge
Gate TypeN-Channel MOSFETN-Channel MOSFETN-Channel MOSFETN-Channel MOSFET
High Side Voltage Max Bootstrap36 V36 V114 V33 V
Input TypeNon-InvertingNon-InvertingNon-InvertingNon-Inverting
Number of Drivers2222
Rise Fall Time Typ26ns, 18ns8ns, 8ns9ns, 7.5ns8ns, 8ns
Action

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