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Renesas ISL2111ABZ-T Gate Drivers

IC GATE DRVR HALF-BRIDGE 8SOIC

48,000 ActiveRenesas8-SOIC (0.154", 3.90mm Width)RoHS
ISL2111ABZ-T - No Image Available

Same model may have multiple batches, images only for reference.

ISL2111ABZ-T
Manufacturer
Part Number (MPN)
ISL2111ABZ-T
Detailed Description
IC GATE DRVR HALF-BRIDGE 8SOIC
Package
8-SOIC (0.154", 3.90mm Width)
Key Features
Package / Case: 8-SOIC (0.154", 3.90mm Width); Mounting Type: Surface Mount
Lifecycle Status
Active
RoHS State
RoHS Compliant
Datasheet
PDF ISL2111ABZ-T Datasheet
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Technical Specifications

Renesas ISL2111ABZ-T Gate Drivers technical specifications.

General

Package / Case
8-SOIC
Mounting Type
Surface Mount
Operating Temperature
-40°C ~ 125°C (TJ)
Supply Voltage
8V ~ 14V
Input Type
Non-Inverting
Channel Type
Independent
Driven Configuration
Half-Bridge
Number of Drivers
2
Gate Type
N-Channel MOSFET
Logic Voltage - VIL, VIH
1.4V, 2.2V

Alternate Parts Comparison (ISL2111ABZ-T vs ISL6620ACBZ-T vs ISL6612CBZA-T vs ISL6612CBZA)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / Case8-SOIC8-SOIC8-SOIC8-SOIC
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Operating Temperature-40°C ~ 125°C (TJ)0°C ~ 125°C (TJ)0°C ~ 125°C (TJ)0°C ~ 125°C (TJ)
Supply Voltage8V ~ 14V4.5V ~ 5.5V10.8V ~ 13.2V10.8V ~ 13.2V
Channel TypeIndependentSynchronousSynchronousSynchronous
Current Peak Output Source Sink3A, 4A2A, 2A1.25A, 2A1.25A, 2A
Driven ConfigurationHalf-BridgeHalf-BridgeHalf-BridgeHalf-Bridge
Gate TypeN-Channel MOSFETN-Channel MOSFETN-Channel MOSFETN-Channel MOSFET
High Side Voltage Max Bootstrap114 V36 V36 V36 V
Input TypeNon-InvertingNon-InvertingNon-InvertingNon-Inverting
Number of Drivers2222
Rise Fall Time Typ9ns, 7.5ns8ns, 8ns26ns, 18ns26ns, 18ns
Action

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