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Renesas 2SC5455-T1-A RF BJT

2SC5455-T1-A by Renesas · RF BJT · TO-253-4, TO-253AA

In StockRenesasTO-253-4, TO-253AA
2SC5455-T1-A - No Image Available

Same model may have multiple batches, images only for reference.

2SC5455-T1-A
Manufacturer
Part Number (MPN)
2SC5455-T1-A
Package
TO-253-4, TO-253AA
Lifecycle Status
Obsolete
Datasheet
PDF 2SC5455-T1-A Datasheet
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Technical Specifications

Renesas 2SC5455-T1-A RF BJT technical specifications.

General

RoHS
True
Mounting Type
Surface Mount
Operating Temperature
150°C (TJ)
Lifecycle Status
Obsolete
Transistor Type
NPN
Voltage Collector Emitter Breakdown Max
6V
Frequency Transition
12GHz
Noise Figure Db Typ F
1.5dB @ 2GHz
Gain
10dB
Power Max
200mW

Alternate Parts Comparison (2SC5455-T1-A vs HFA3102BZ96 vs HSG1002VE-TL-E vs HFA3135IHZ96)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / Case--14-SOIC4-SMD, Gull WingSOT-23-6
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Current Collector IC Max100mA30mA35mA26mA
Dc Current Gain Hfe Min IC Vce75 @ 30mA, 3V40 @ 10mA, 3V100 @ 5mA, 2V15 @ 10mA, 2V
Frequency Transition12GHz10GHz38GHz7GHz
Noise Figure Db Typ F1.5dB @ 2GHz1.8dB ~ 2.1dB @ 500MHz ~ 1GHz0.7dB ~ 1.8dB @ 1.8GHz ~ 5.8GHz5.2dB @ 900MHz
Transistor TypeNPN6 NPNNPN2 PNP (Dual)
Voltage Collector Emitter Breakdown Max6V12V3.5V9V
Operating Temperature150°C (TJ)150°C (TJ)--150°C (TJ)
Gain10dB12.4dB ~ 17.5dB8dB ~ 19.5dB--
PackageTO-253-4, TO-253AATape & Reel (TR)--Tape & Reel (TR)
Power Max200mW250mW200mW--
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