Renesas 2SC5455-T1-A RF BJT
2SC5455-T1-A by Renesas · RF BJT · TO-253-4, TO-253AA
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
2SC5455-T1-A
Package
TO-253-4, TO-253AA
Lifecycle Status
Obsolete
Datasheet
2SC5455-T1-A Datasheet
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Technical Specifications
Renesas 2SC5455-T1-A RF BJT technical specifications.
General
RoHS
Yes
Mounting Type
Surface Mount
Operating Temperature
150°C (TJ)
Lifecycle Status
Obsolete
Transistor Type
NPN
Voltage Collector Emitter Breakdown Max
6V
Frequency Transition
12GHz
Noise Figure Db Typ F
1.5dB @ 2GHz
Gain
10dB
Power Max
200mW
Alternate Parts Comparison (2SC5455-T1-A vs HFA3102BZ96 vs HSG1002VE-TL-E vs HFA3135IHZ96)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| RoHS | Yes | Yes | Yes | Yes |
| Current Collector IC Max | 100mA | 30mA | 35mA | 26mA |
| Dc Current Gain Hfe Min IC Vce | 75 @ 30mA, 3V | 40 @ 10mA, 3V | 100 @ 5mA, 2V | 15 @ 10mA, 2V |
| Frequency Transition | 12GHz | 10GHz | 38GHz | 7GHz |
| Noise Figure Db Typ F | 1.5dB @ 2GHz | 1.8dB ~ 2.1dB @ 500MHz ~ 1GHz | 0.7dB ~ 1.8dB @ 1.8GHz ~ 5.8GHz | 5.2dB @ 900MHz |
| Transistor Type | NPN | 6 NPN | NPN | 2 PNP (Dual) |
| Voltage Collector Emitter Breakdown Max | 6V | 12V | 3.5V | 9V |
| Operating Temperature | 150°C (TJ) | 150°C (TJ) | -- | 150°C (TJ) |
| Gain | 10dB | 12.4dB ~ 17.5dB | 8dB ~ 19.5dB | -- |
| Package | TO-253-4, TO-253AA | Tape & Reel (TR) | -- | Tape & Reel (TR) |
| Power Max | 200mW | 250mW | 200mW | -- |
| Action |
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