Panjit BSS123_R1_00001 MOSFETs
Small Signal Field-Effect Transistor,
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
BSS123_R1_00001
Detailed Description
Small Signal Field-Effect Transistor,
Package
SOT23-3
Lifecycle Status
Active
Datasheet
BSS123_R1_00001 Datasheet
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Technical Specifications
Panjit BSS123_R1_00001 MOSFETs technical specifications.
General
Series
NFET-100TMN
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
100 V
ID Continuous Drain Current
170 mA
Rds on Drain Source Resistance
10 Ohms
Alternate Parts Comparison (BSS123_R1_00001 vs PJA3441-AU_R1_000A1 vs 2N7002K_R1_00001 vs PJA3415AE-AU_R1_000A1)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes |
| Package | SOT23-3 | SOT23-3 | SOT23-3 | SOT23-3 |
| Mounting Type | SMD/SMT | -- | SMD/SMT | SMD/SMT |
| Operating Temperature | - 55°C ~ + 150°C | -- | - 55°C ~ + 150°C | - 55°C ~ + 150°C |
| Number of Channels | 1 Channel | -- | 1 Channel | 1 Channel |
| Channel Mode | Enhancement | -- | Enhancement | Enhancement |
| ID Continuous Drain Current | 170 mA | -- | 300 mA | 4.3 A |
| Pd Power Dissipation | 500 mW | -- | 350 mW | 1.25 W |
| Qg Gate Charge | 1.8 nC | -- | 800 pC | 24 nC |
| Rds on Drain Source Resistance | 10 Ohms | -- | 3 Ohms | 50 mOhms |
| Technology | Si | -- | Si | Si |
| Transistor Polarity | N-Channel | -- | N-Channel | P-Channel |
| Action |
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