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onsemi UMC3NT1G BJTs

Complementary Bipolar Digital Transistor (BRT), SC-88A (SC-70-5 / SOT-353), 3000-REEL

702,000 ActiveonsemiSC-88A$0.07
UMC3NT1G SC-88A package illustration

Same model may have multiple batches, images only for reference.

UMC3NT1G
Manufacturer
Part Number (MPN)
UMC3NT1G
Detailed Description
Complementary Bipolar Digital Transistor (BRT), SC-88A (SC-70-5 / SOT-353), 3000-REEL
Package
SC-88A
Lifecycle Status
Active
Datasheet
PDF UMC3NT1G Datasheet
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Technical Specifications

onsemi UMC3NT1G BJTs technical specifications.

General

Package / Case
5-TSSOP
Mounting Type
Surface Mount
Lifecycle Status
Active
Dc Current Gain Hfe Min IC Vce
35 @ 5mA, 10V
Vce Saturation Max Ib IC
250mV @ 300µA, 10mA
Current Collector Cutoff Max
500nA
Power Max
150mW
Transistor Type
1 NPN, 1 PNP - Pre-Biased (Dual)
Current Collector IC Max
100mA
Voltage Collector Emitter Breakdown Max
50V

Alternate Parts Comparison (UMC3NT1G vs UMC5NT1G vs UMC5NT2G vs MBT3906DW1T1G)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / Case5-TSSOP5-TSSOP5-TSSOP6-TSSOP
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Lifecycle StatusActiveActiveActiveProduction
Transistor Type1 NPN, 1 PNP - Pre-Biased (Dual)1 NPN, 1 PNP - Pre-Biased (Dual)1 NPN, 1 PNP - Pre-Biased (Dual)2 PNP (Dual)
Current Collector IC Max100mA----200mA
Dc Current Gain Hfe Min IC Vce35 @ 5mA, 10V----100 @ 10mA, 1V
Power Max150mW----150mW
Vce Saturation Max Ib IC250mV @ 300µA, 10mA----400mV @ 5mA, 50mA
Voltage Collector Emitter Breakdown Max50V----40V
Current Collector Cutoff Max500nA------
Resistor Base R110kOhms------
Resistor Emitter Base R210kOhms------
Action

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